SEMICONDUCTOR DEVICE

• US 20110140099A1
• Filed: 12/08/2010
• Published: 06/16/2011
• Est. Priority Date: 12/11/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Granted Patent: US 8,809,850 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/12 characterised by the materials of which they are formed
• CPC Class Codes: H01L 29/16 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/26 including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 , e.g. alloys
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H03K 3/012 Modifications of generator to improve response time or to decrease power consumption

Abstract

One object is to provide a new semiconductor device whose standby power is sufficiently reduced. The semiconductor device includes a first power supply terminal, a second power supply terminal, a switching transistor using an oxide semiconductor material and an integrated circuit. The first power supply terminal is electrically connected to one of a source terminal and a drain terminal of the switching transistor. The other of the source terminal and the drain terminal of the switching transistor is electrically connected to one terminal of the integrated circuit. The other terminal of the integrated circuit is electrically connected to the second power supply terminal.

Claims

1. A semiconductor device comprising:

a first power supply terminal;

a second power supply terminal;

a switching transistor including an oxide semiconductor material; and

an integrated circuit including a first terminal and a second terminal,

wherein the first power supply terminal is electrically connected to one of a source terminal and a drain terminal of the switching transistor,

wherein the other of the source terminal and the drain terminal of the switching transistor is electrically connected to the first terminal of the integrated circuit, and

wherein the second terminal of the integrated circuit is electrically connected to the second power supply terminal.

2. The semiconductor device according to claim 1,

wherein the switching transistor comprises:

an oxide semiconductor layer including the oxide semiconductor material;

a gate electrode configured to apply an electric field to the oxide semiconductor layer;

a gate insulating layer between the oxide semiconductor layer and the gate electrode; and

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor material is an In—

Ga—

Zn—

O-based oxide semiconductor material.

4. The semiconductor device according to claim 1, wherein leakage current of the switching transistor is 1×

10<sup>−

13</sup> A or less.

5. The semiconductor device according to claim 1, wherein the integrated circuit includes a semiconductor material other than the oxide semiconductor material.

6. The semiconductor device according to claim 5, wherein the semiconductor material other than the oxide semiconductor material is silicon.

7. The semiconductor device according to claim 1, wherein the integrated circuit includes a CMOS circuit.

8. The semiconductor device according to claim 1,

wherein the integrated circuit further includes a third terminal and a fourth terminal,

wherein the third terminal is an input terminal, and

wherein the fourth terminal is an output terminal.

9. A semiconductor device comprising:

a first power supply terminal;

a second power supply terminal;

a switching transistor including an oxide semiconductor material and including a first control terminal and a second control terminal; and

an integrated circuit including a first terminal and a second terminal,

wherein the first power supply terminal is electrically connected to one of a source terminal and a drain terminal of the switching transistor,

wherein the other of the source terminal and the drain terminal of the switching transistor is electrically connected to the first terminal of the integrated circuit, and

wherein the second terminal of the integrated circuit is electrically connected to the second power supply terminal.

10. The semiconductor device according to claim 9,

wherein the switching transistor comprises:

an oxide semiconductor layer including the oxide semiconductor material;

a first gate electrode configured to apply an electric field to the oxide semiconductor layer;

a gate insulating layer between the oxide semiconductor layer and the first gate electrode;

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;

a second gate electrode configured to apply an electric field to the oxide semiconductor layer to control a threshold voltage; and

a protective insulating layer between the source electrode and the drain electrode, and the second gate electrode.

11. The semiconductor device according to claim 9, wherein the oxide semiconductor material is an In—

Ga—

Zn—

O-based oxide semiconductor material.

12. The semiconductor device according to claim 9, wherein leakage current of the switching transistor is 1×

10<sup>−

13</sup> A or less.

13. The semiconductor device according to claim 9, wherein the integrated circuit includes a semiconductor material other than the oxide semiconductor material.

14. The semiconductor device according to claim 13, wherein the semiconductor material other than the oxide semiconductor material is silicon.

15. The semiconductor device according to claim 9, wherein the integrated circuit includes a CMOS circuit.

16. The semiconductor device according to claim 9,

wherein the integrated circuit further includes a third terminal and a fourth terminal,

wherein the third terminal is an input terminal, and

wherein the fourth terminal is an output terminal.

17. A semiconductor device comprising:

a first power supply terminal;

a second power supply terminal;

an integrated circuit including a first terminal and a second terminal;

an insulating layer over the integrated circuit; and

a switching transistor including an oxide semiconductor material over the insulating layer,

wherein the first power supply terminal is electrically connected to one of a source terminal and a drain terminal of the switching transistor,

wherein the other of the source terminal and the drain terminal of the switching transistor is electrically connected to the first terminal of the integrated circuit, and

wherein the second terminal of the integrated circuit is electrically connected to the second power supply terminal.

18. The semiconductor device according to claim 17,

wherein the switching transistor comprises:

an oxide semiconductor layer including the oxide semiconductor material;

a gate electrode configured to apply an electric field to the oxide semiconductor layer;

a gate insulating layer between the oxide semiconductor layer and the gate electrode; and

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer.

19. The semiconductor device according to claim 17, wherein the oxide semiconductor material is an In—

Ga—

Zn—

O-based oxide semiconductor material.

20. The semiconductor device according to claim 17, wherein leakage current of the switching transistor is 1×

10<sup>−

13</sup> A or less.

21. The semiconductor device according to claim 17, wherein the integrated circuit includes a semiconductor material other than the oxide semiconductor material.

22. The semiconductor device according to claim 21, wherein the semiconductor material other than the oxide semiconductor material is silicon.

23. The semiconductor device according to claim 17, wherein the integrated circuit includes a CMOS circuit.

24. The semiconductor device according to claim 17,

wherein the integrated circuit further includes a third terminal and a fourth terminal,

wherein the third terminal is an input terminal, and

wherein the fourth terminal is an output terminal.

25. The semiconductor device according to claim 17,

wherein the integrated circuit is formed on an semiconductor substrate.