Method for Production of a Radiation-Emitting Semiconductor Chip
First Claim
1. A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip comprising the steps of:
- (a) growing the semiconductor layer sequence on a substrate;
(b) forming or applying a mirror layer on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer;
(c) separating the semiconductor layer sequence from the substrate, wherein a separation zone made of compound semiconductor material of the semiconductor layer sequence is at least partly decomposed, and(d) etching a separation surface of the semiconductor layer sequence, from which the substrate is separated, by means of an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.
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Abstract
A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.
29 Citations
18 Claims
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1. A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip comprising the steps of:
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(a) growing the semiconductor layer sequence on a substrate; (b) forming or applying a mirror layer on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer; (c) separating the semiconductor layer sequence from the substrate, wherein a separation zone made of compound semiconductor material of the semiconductor layer sequence is at least partly decomposed, and (d) etching a separation surface of the semiconductor layer sequence, from which the substrate is separated, by means of an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification