Low OHMIC contacts containing germanium for gallium nitride or other nitride-based power devices
First Claim
Patent Images
1. An apparatus comprising:
- a substrate;
a Group III-nitride layer over the substrate; and
an electrical contact over the Group III-nitride layer, the electrical contact comprising a stack having multiple layers of conductive material, at least one of the layers in the stack comprising germanium.
1 Assignment
0 Petitions
Accused Products
Abstract
An apparatus includes a substrate, a Group III-nitride layer over the substrate, and an electrical contact over the Group III-nitride layer. The electrical contact includes a stack having multiple layers of conductive material, and at least one of the layers in the stack includes germanium. The layers in the stack may include a contact layer, where the contact layer includes aluminum copper. The stack could include a titanium or titanium alloy layer, an aluminum or aluminum alloy layer, and a germanium or germanium alloy layer. At least one of the layers in the stack could include an aluminum or titanium alloy having a germanium content between about 1% and about 5%.
-
Citations
20 Claims
-
1. An apparatus comprising:
-
a substrate; a Group III-nitride layer over the substrate; and an electrical contact over the Group III-nitride layer, the electrical contact comprising a stack having multiple layers of conductive material, at least one of the layers in the stack comprising germanium. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A system comprising:
-
a semiconductor structure comprising a substrate and a Group III-nitride layer over the substrate; a Group III-nitride integrated circuit device in or over the Group III-nitride layer; and multiple electrical contacts in electrical connection to the Group III-nitride integrated circuit device, each electrical contact comprising a stack having multiple layers of conductive material, at least one of the layers in the stack comprising germanium. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
-
-
16. A method comprising:
-
forming a Group III-nitride layer over a substrate; and forming an electrical contact over the Group III-nitride layer, the electrical contact comprising a stack having multiple layers of conductive material, at least one of the layers in the stack comprising germanium. - View Dependent Claims (17, 18, 19, 20)
-
Specification