SEMICONDUCTOR DEVICE

• US 20110140179A1
• Filed: 10/11/2010
• Published: 06/16/2011
• Est. Priority Date: 12/16/2009
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Kusunoki, Shigeru, Ishizawa, Shinichi
• Granted Patent: US 8,373,207 B2
• Time in Patent Office: Days
• US Class Current: 257/256
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors

Abstract

A semiconductor device includes: a rectifying element; an electrode pad electrically connected to the rectifying element; and a resistance and a depletion transistor arranged between the rectifying element and the electrode pad, and electrically connected to each other. The semiconductor device has a configuration in which the rectifying element, the resistance, the depletion transistor, and the electrode pad are serially connected. The semiconductor device is configured to generate a gate potential of the depletion transistor based on a difference in potential across the resistance and to produce a depletion layer in a channel of the depletion transistor based on the gate potential. As a result, a semiconductor device having reasonably large current at low voltage and small current at high voltage can be obtained.

Claims

1. A semiconductor device, comprising:

a rectifying element;

an electrode pad electrically connected to said rectifying element; and

a resistance and a depletion transistor arranged between said rectifying element and said electrode pad, and electrically connected to each other,

said semiconductor device having a configuration in which said rectifying element, said resistance, said depletion transistor, and said electrode pad are serially connected, and

said semiconductor device being configured to generate a gate potential of said depletion transistor based on a difference in potential across said resistance and to produce a depletion layer in a channel of said depletion transistor based on said gate potential.

2. The semiconductor device according to claim 1, wherein

said depletion transistor includes an n-channel depletion transistor, and

said semiconductor device is configured such that a lower potential of a potential of a part of said rectifying element and a potential of said electrode pad is used as said gate potential of said n-channel depletion transistor.

3. The semiconductor device according to claim 1, wherein

said depletion transistor includes a p-channel depletion transistor, and

said semiconductor device is configured such that a higher potential of a potential of a part of said rectifying element and a potential of said electrode pad is used as said gate potential of said p-channel depletion transistor.

4. The semiconductor device according to claim 1, further comprising

a first insulating film and a second insulating film, wherein

said rectifying element includes an anode,

said depletion transistor includes an n-channel depletion transistor,

said electrode pad includes an anode electrode pad,

said anode of said rectifying element, said resistance, said n-channel depletion transistor, and said anode electrode pad are serially connected in ascending order of potential,

said channel of said n-channel depletion transistor overlies said anode of said rectifying element with said first insulating film interposed therebetween, and underlies said anode electrode pad with said second insulating film interposed therebetween, and

said semiconductor device is configured such that a value obtained by dividing a dielectric constant of said first insulating film by a thickness of said first insulating film is larger than a value obtained by dividing a dielectric constant of said second insulating film by a thickness of said second insulating film.

5. The semiconductor device according to claim 1, further comprising

a first insulating film and a second insulating film, wherein

said rectifying element includes a cathode,

said depletion transistor includes an n-channel depletion transistor,

said electrode pad includes a cathode electrode pad,

said cathode of said rectifying element, said n-channel depletion transistor, said resistance, and said cathode electrode pad are serially connected in descending order of potential,

said channel of said n-channel depletion transistor overlies said cathode of said rectifying element with said first insulating film interposed therebetween, and underlies said cathode electrode pad with said second insulating film interposed therebetween, and

said semiconductor device is configured such that a value obtained by dividing a dielectric constant of said first insulating film by a thickness of said first insulating film is smaller than a value obtained by dividing a dielectric constant of said second insulating film by a thickness of said second insulating film.

6. The semiconductor device according to claim 1, further comprising

a first insulating film and a second insulating film, wherein

said rectifying element includes an anode,

said depletion transistor includes a p-channel depletion transistor,

said electrode pad includes an anode electrode pad,

said anode of said rectifying element, said p-channel depletion transistor, said resistance, and said anode electrode pad are serially connected in ascending order of potential,

said channel of said p-channel depletion transistor underlies said anode electrode pad with said second insulating film interposed therebetween, and overlies said anode of said rectifying element with said first insulating film interposed therebetween, and

said semiconductor device is configured such that a value obtained by dividing a dielectric constant of said second insulating film by a thickness of said second insulating film is larger than a value obtained by dividing a dielectric constant of said first insulating film by a thickness of said first insulating film.

7. The semiconductor device according to claim 1, further comprising

a first insulating film and a second insulating film, wherein

said rectifying element includes a cathode,

said depletion transistor includes a p-channel depletion transistor,

said electrode pad includes a cathode electrode pad,

said cathode of said rectifying element, said resistance, said p-channel depletion transistor, and said cathode electrode pad are serially connected in descending order of potential,

said channel of said p-channel depletion transistor underlies said cathode electrode pad with said second insulating film interposed therebetween, and overlies said cathode of said rectifying element with said first insulating film interposed therebetween, and

said semiconductor device is configured such that a value obtained by dividing a dielectric constant of said second insulating film by a thickness of said second insulating film is smaller than a value obtained by dividing a dielectric constant of said first insulating film by a thickness of said first insulating film.

8. The semiconductor device according to claim 1, wherein

said depletion transistor includes a source, and

said resistance is formed integrally with said channel or said source of said depletion transistor.

9. The semiconductor device according to claim 1, wherein

said depletion transistor includes an n-channel depletion transistor,

said n-channel depletion transistor has a portion sandwiched between a part of said rectifying element and said electrode pad,

said portion sandwiched includes a first impurity concentration portion and a second impurity concentration portion,

said first impurity concentration portion is arranged on a higher potential side of the part of said rectifying element and said electrode pad, and

said second impurity concentration portion is arranged on a lower potential side of the part of said rectifying element and said electrode pad, and has an n-type impurity concentration higher than that of said first impurity concentration portion.

10. The semiconductor device according to claim 1, wherein

said depletion transistor includes a p-channel depletion transistor,

said p-channel depletion transistor has a portion sandwiched between a part of said rectifying element and said electrode pad,

said portion sandwiched includes a first impurity concentration portion and a second impurity concentration portion,

said first impurity concentration portion is arranged on a lower potential side of the part of said rectifying element and said electrode pad, and

said second impurity concentration portion is arranged on a higher potential side of the part of said rectifying element and said electrode pad, and has a p-type impurity concentration higher than that of said first impurity concentration portion.

11. The semiconductor device according to claim 1, further comprising

a first insulating film and a second insulating film, wherein

said rectifying element includes an anode,

said depletion transistor includes an n-channel depletion transistor and a p-channel depletion transistor,

said electrode pad includes an anode electrode pad,

said anode of said rectifying element, said p-channel depletion transistor, said resistance, said n-channel depletion transistor, and said anode electrode pad are serially connected in ascending order of potential,

said semiconductor device is configured such that said channel of said n-channel depletion transistor overlies at least a part of said anode of said rectifying element with said first insulating film interposed therebetween, and

said semiconductor device is configured such that said channel of said p-channel depletion transistor underlies at least a part of said anode electrode pad with said second insulating film interposed therebetween.

12. The semiconductor device according to claim 1, further comprising

a first insulating film and a second insulating film, wherein

said rectifying element includes a cathode,

said depletion transistor includes an n-channel depletion transistor and a p-channel depletion transistor,

said electrode pad includes a cathode electrode pad,

said cathode of said rectifying element, said n-channel depletion transistor, said resistance, said p-channel depletion transistor, and said cathode electrode pad are serially connected in descending order of potential,

said semiconductor device is configured such that said channel of said p-channel depletion transistor overlies at least a part of said cathode of said rectifying element with said first insulating film interposed therebetween, and

said semiconductor device is configured such that said channel of said n-channel depletion transistor underlies at least a part of said cathode electrode pad with said second insulating film interposed therebetween.

17. The semiconductor device according to claim 1, wherein

said rectifying element includes an anode, and

said electrode pad is an anode electrode pad connected to said anode side.

19. The semiconductor device according to claim 1, wherein

said rectifying element includes a cathode, and

said electrode pad is a cathode electrode pad connected to said cathode side.

13. A semiconductor device, comprising:

a rectifying element;

an electrode pad electrically connected to said rectifying element; and

a resistance and a junction-type field effect transistor arranged between said rectifying element and said electrode pad, and electrically connected to each other,

said semiconductor device having a configuration in which said rectifying element, said resistance, said junction-type field effect transistor, and said electrode pad are serially connected, and

said semiconductor device being configured to generate a gate potential of said junction-type field effect transistor based on a difference in potential across said resistance and to produce a depletion layer in a channel of said junction-type field effect transistor based on said gate potential.

14. The semiconductor device according to claim 13, wherein

said junction-type field effect transistor includes an n-channel junction-type field effect transistor, and

said semiconductor device is configured such that a lower potential of a potential of a part of said rectifying element and a potential of said electrode pad is used as said gate potential of said n-channel junction-type field effect transistor.

15. The semiconductor device according to claim 13, wherein

said junction-type field effect transistor includes a p-channel junction-type field effect transistor, and

said semiconductor device is configured such that a higher potential of a potential of a part of said rectifying element and a potential of said electrode pad is used as said gate potential of said p-channel junction-type field effect transistor.

16. The semiconductor device according to claim 13, wherein

said junction-type field effect transistor includes a source, and

said resistance is formed integrally with said channel or said source of said junction-type field effect transistor.

18. The semiconductor device according to claim 13, wherein

said rectifying element includes an anode, and

said electrode pad is an anode electrode pad connected to said anode side.

20. The semiconductor device according to claim 13, wherein

said rectifying element includes a cathode, and

said electrode pad is a cathode electrode pad connected to said cathode side.

21. The semiconductor device according to claim 13, wherein

said junction-type field effect transistor includes a gate, and

said gate of said junction-type field effect transistor is spaced and arranged in a form of a stepping-stone in a width direction of said channel.