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Method of Filling Large Deep Trench with High Quality Oxide for Semiconductor Devices

  • US 20110140228A1
  • Filed: 12/15/2009
  • Published: 06/16/2011
  • Est. Priority Date: 12/15/2009
  • Status: Active Grant
First Claim
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1. A method of creating a semiconductor device structure with an oxide-filled large deep trench (OFLDT) portion having trench size TCS and trench depth TCD, the method comprises:

  • a) providing a bulk semiconductor layer (BSL), having a thickness BSLT>

    TCD, and mapping out a large trench top area (LTTA) atop the BSL with its geometry equal to that of OFLDT;

    b) partitioning the LTTA into interspersed, complementary interim areas ITA-A and ITA-B each of pre-determined geometry;

    c) creating into the top BSL surface, a plurality of interim vertical trenches so as to remove bulk semiconductor materials corresponding to ITA-B till the depth TCD; and

    d) converting;

    the remaining bulk semiconductor materials corresponding to ITA-A into oxide and;

    should there be any residual space left atop the LTTA, filling up the residual space with oxide.

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