Method of Filling Large Deep Trench with High Quality Oxide for Semiconductor Devices
First Claim
1. A method of creating a semiconductor device structure with an oxide-filled large deep trench (OFLDT) portion having trench size TCS and trench depth TCD, the method comprises:
- a) providing a bulk semiconductor layer (BSL), having a thickness BSLT>
TCD, and mapping out a large trench top area (LTTA) atop the BSL with its geometry equal to that of OFLDT;
b) partitioning the LTTA into interspersed, complementary interim areas ITA-A and ITA-B each of pre-determined geometry;
c) creating into the top BSL surface, a plurality of interim vertical trenches so as to remove bulk semiconductor materials corresponding to ITA-B till the depth TCD; and
d) converting;
the remaining bulk semiconductor materials corresponding to ITA-A into oxide and;
should there be any residual space left atop the LTTA, filling up the residual space with oxide.
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Abstract
A method is disclosed for creating a semiconductor device structure with an oxide-filled large deep trench (OFLDT) portion having trench size TCS and trench depth TCD. A bulk semiconductor layer (BSL) is provided with a thickness BSLT>TCD. A large trench top area (LTTA) is mapped out atop BSL with its geometry equal to OFLDT. The LTTA is partitioned into interspersed, complementary interim areas ITA-A and ITA-B. Numerous interim vertical trenches of depth TCD are created into the top BSL surface by removing bulk semiconductor materials corresponding to ITA-B. The remaining bulk semiconductor materials corresponding to ITA-A are converted into oxide. If any residual space is still left between the so-converted ITA-A, the residual space is filled up with oxide deposition. Importantly, the geometry of all ITA-A and ITA-B should be configured simple and small enough to facilitate fast and efficient processes of oxide conversion and oxide filling.
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Citations
22 Claims
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1. A method of creating a semiconductor device structure with an oxide-filled large deep trench (OFLDT) portion having trench size TCS and trench depth TCD, the method comprises:
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a) providing a bulk semiconductor layer (BSL), having a thickness BSLT>
TCD, and mapping out a large trench top area (LTTA) atop the BSL with its geometry equal to that of OFLDT;b) partitioning the LTTA into interspersed, complementary interim areas ITA-A and ITA-B each of pre-determined geometry; c) creating into the top BSL surface, a plurality of interim vertical trenches so as to remove bulk semiconductor materials corresponding to ITA-B till the depth TCD; and d) converting; the remaining bulk semiconductor materials corresponding to ITA-A into oxide and; should there be any residual space left atop the LTTA, filling up the residual space with oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a large deep oxide trench in a semiconductor substrate comprising:
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a) forming, in the semiconductor substrate, a plurality of interim trenches separated by a corresponding number of remaining semiconductor mesas between the interim trenches; and b) oxidizing the remaining semiconductor mesas until they are substantially converted to oxide. - View Dependent Claims (15, 16, 17, 18)
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- 19. A wide and deep oxide trench in a semiconductor substrate comprising vertical oxide ribs, being made of thermal oxide, interspersed throughout the wide and deep oxide trench.
Specification