IN VACUUM OPTICAL WAFER HEATER FOR CRYOGENIC PROCESSING

• US 20110143461A1
• Filed: 12/15/2009
• Published: 06/16/2011
• Est. Priority Date: 12/15/2009
• Status: Active Grant

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Fish, Roger B., Krampert, Jeffrey E.
• Granted Patent: US 8,328,494 B2
• Time in Patent Office: Days
• US Class Current: 438/5
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67196 characterized by the construction of the transfer chamber
• CPC Class Codes: H01L 21/67213 comprising at least one ion or electron beam chamber coating by ion implantation C23C; ion or electron beam tubes H01J37/00

Abstract

A vacuum assembly used for warming processed substrates above the dew point to prevent unwanted moisture on the processed substrate surfaces as well as reducing negative impact on manufacturing throughput. The vacuum assembly includes a processing chamber, a substrate handling robot, and a heater which may be an optical heater. The processing chamber is configured to cryogenically process one or more substrates. The transfer chamber is connected to the processing chamber and houses the substrate handling robot. The substrate handling robot is configured to displace one or more substrates from the processing chamber to the transfer chamber. The heater is connected to the transfer chamber above the substrate handling robot such that the heater emits energy incident on the substrate when the substrate handling robot displaces the substrate in the transfer chamber.

Claims

1. A vacuum assembly for processing substrates comprising:

a processing chamber configured to cryogenically process one or more substrates;

a transfer chamber connected to said processing chamber;

a substrate handling robot disposed in said transfer chamber, said handling robot configured to displace one or more substrates from said processing chamber to said transfer chamber associated with an in-line processing system; and

a radiative heater connected to said transfer chamber above said substrate handling robot, said heater projecting energy on at least one of said one or more substrates during an in-line process such that when said substrate handling robot displaces said at least one substrate in said transfer chamber, said heater heats said at least one substrate.

2. The vacuum assembly of claim 1 further comprising a loadlock connected to said transfer chamber, said loadlock having one or more substrate supports for supporting one or more of said substrates.

3. The vacuum assembly of claim 2 wherein said heater is a localised heater such that said heater has a shape corresponding to a shape of said substrate transferred from said process chamber to said transfer chamber.

4. The vacuum assembly of claim 1 wherein said transfer chamber has a first portion above which said heater is disposed, said heater extending across said first portion.

5. The vacuum assembly of claim 1 wherein said transfer chamber is maintained in a vacuum having a first pressure and said process chamber maintained in a vacuum having a second pressure, said substrate transferred from said process chamber to said transfer chamber when said first pressure is substantially equal to said second pressure.

6. The vacuum assembly of claim 1 wherein said heater projects energy on said at least one substrate until a temperature of said at least one substrate is above the dew point of water.

7. The vacuum assembly of claim 2 wherein said substrate handling robot is configured to displace said one or more substrates from said processing chamber to said loadlock.

8. The vacuum assembly of claim 1 wherein said substrate handling robot is a first substrate handling robot, said vacuum assembly further comprising a second substrate handling robot disposed in said transfer chamber, said second, handling robot configured to displace one or more substrates from said processing chamber to said transfer chamber.

9. The vacuum assembly of claim 8 wherein said heater is a first heater, said vacuum assembly further comprising a second heater connected to said transfer chamber above said second substrate handling robot such that said second heater projects energy on at least one of said one or more substrates when said second substrate handling robot, displaces said at least one substrate in said transfer chamber.

10. The vacuum assembly of claim 1 wherein said heater is an optical heater configured to emit optical energy.

11. The vacuum assembly of claim 1 wherein said beater is configured to emit microwave energy.

12. The vacuum assembly of claim 1 wherein said heater is configured to emit RF energy.

13. A vacuum assembly for processing substrates in an ion implanter comprising;

a processing chamber configured to cryogenically process one or mere substrates;

a transfer chamber connected;

to said processing chamber;

a first substrate handling robot disposed in said transfer chamber, said first handling robot configured to displace one or more substrates from said processing chamber to said transfer chamber;

a first heater connected to said transfer chamber above said first substrate handling robot such that said first heater projects energy on at least one of said one or more substrates during an in-line process when said substrate handling robot displaces said at least one substrate in said transfer chamber;

a second substrate handling robot disposed in said transfer chamber, said second handling robot configured to displace one or more substrates from, said processing chamber to said, transfer chamber; and

a second heater connected to said transfer chamber above said second substrate handling robot such that said second heater projects energy on at least one of said one or more substrates during the in-line process when said, second substrate handling robot displaces said at least one substrate in said transfer chamber.

14. The vacuum assembly of claim 13 wherein said first and second heaters are each configured to emit optical energy.

15. The vacuum assembly of claim 13 wherein said first and second heaters are each configured to emit microwave energy.

16. The vacuum assembly of claim 13 wherein said first and second heaters are each configured to emit RF energy.

17. The vacuum assembly of claim 13 wherein said first heater is a localized heater such that said first heater has a respective shape corresponding to a shape of said one or more substrates transferred from said process chamber to said transfer chamber.

18. The vacuum assembly of claim 13 wherein said second heater is a localised heater such that said second heater has a respective shape corresponding to a shape of said one or more substrates transferred from said process chamber to said transfer chamber.

19. A method of processing substrates comprising:

providing unprocessed substrates to a loadlock;

retrieving the unprocessed substrates from the loadlock with a substrate handling robot located within a transfer chamber;

transferring the unprocessed substrates using the substrate handling robot from the loadlock to a process chamber via the transfer chamber;

processing the substrate in the process chamber at Cryogenic temperatures;

transferring the processed wafer from the process chamber to the transfer chamber using the substrate handling robot;

exposing the processed substrate to optical energy from an optical heater located above the substrate handling robot in the transfer chamber;

determining if the temperature of the cryogenically processed substrate is above the dew point; and

transferring the substrate to the loadlock when the temperature of the cryogenically processed substrate is above the dew point.