TEMPERATURE CONTROLLED SHOWERHEAD FOR HIGH TEMPERATURE OPERATIONS

• US 20110146571A1
• Filed: 12/18/2009
• Published: 06/23/2011
• Est. Priority Date: 12/18/2009
• Status: Active Grant

• Current Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Original Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Inventors: Sabri, Mohammed, Bartlett, Christopher M., Stowell, Marshall R., Henri, Jon, Li, Ming
• Granted Patent: US 9,034,142 B2
• Time in Patent Office: Days
• US Class Current: 118/667
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/45572 Cooled nozzles
• CPC Class Codes: C23C 16/458 characterised by the method used for supporting substrates in the reaction chamber
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence

Abstract

A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.

Claims

1. A temperature controlled showerhead assembly for use in a chemical vapor deposition (CVD) apparatus, the temperature controlled showerhead assembly comprising:

a heat conductive stem;

a back plate attached to the heat conductive stem;

a face plate thermally coupled to the heat conductive stem and attached to the back plate;

a heating element thermally coupled to the heat conductive stem;

a heat exchanger thermally coupled to the heat conductive stem; and

a temperature sensor thermally coupled to the face plate,

wherein the temperature controlled showerhead is configured to maintain the temperature of the face plate within a predetermined range by providing heat transfer paths between the heating element and the face plate and between the heat exchanger and the face plate.

2. The temperature controlled showerhead assembly of claim 1, wherein a solid cross-section of the heat conductive stem is at least about 5 square inches on average along the length of the shaft portion.

3. The temperature controlled showerhead assembly of claim 1, wherein one or more components selected from the group consisting of the heat conductive stem, the back plate, and the face plate comprising a material with a thermal conductivity of at least about 150 Watts per meter per Kelvin.

4. The temperature controlled showerhead assembly of claim 1, wherein one or more components selected from the group consisting of the heat conductive stem, the back plate, and the face plate comprising a material selected from the group consisting of aluminum 6061 and aluminum 3003.

5. The temperature controlled showerhead assembly of claim 1, wherein an average thickness of the back plate is at least about 2 inches.

6. The temperature controlled showerhead assembly of claim 1, wherein an average thickness of the face plate is between about 0.5 inches and 1 inch.

7. The temperature controlled showerhead assembly of claim 1, wherein an average gap between the face plate and the back plate is between about 0.25 inch and 0.75 inch.

8. The temperature controlled showerhead assembly of claim 1, wherein a contact area between the face plate and the back plate is between about 30 square inches and 50 square inches.

9. The temperature controlled showerhead assembly of claim 1, wherein the face plate has a diameter of between about 13.5 inches and 16.5 inches.

10. The temperature controlled showerhead assembly of claim 1, wherein the heat exchanger comprises a convective cooling fluid passageway configured to allow for a flow of a cooling fluid.

11. The temperature controlled showerhead assembly of claim 10, wherein the cooling fluid is selected from the group consisting of water and a liquid antifreeze solution.

12. The temperature controlled showerhead assembly of claim 1, wherein the heat exchanger is positioned within about 7 inches from the face plate.

13. The temperature controlled showerhead assembly of claim 1, wherein the temperature controlled showerhead assembly is configured to maintain the temperature of the face place at between about 200°

C. and 300°

C. for an emissivity of the face plate at between about 0.2 and 0.8.

14. The temperature controlled showerhead assembly of claim 13, wherein the heating element comprises two cartridge heaters each configured to provide power output of at least about 500 W.

15. The temperature controlled showerhead assembly of claim 1, wherein the stem comprises a top surface and wherein the heating element is positioned within the stem and configured to be placed into the stem and removed from the stem through the top surface.

16. The temperature controlled showerhead assembly of claim 1, wherein the stem comprises a top surface and wherein the temperature sensor is positioned within the stem and configured to be placed into the stem and removed from the stem through the top surface.

17. The temperature controlled showerhead assembly of claim 1, wherein an external surface of one or more elements selected from the group consisting of the stem and the back plate comprises a high emissivity surface.

18. The temperature controlled showerhead assembly of claim 17, wherein the high emissivity surface is anodized aluminum.

19. The temperature controlled showerhead assembly of claim 1, wherein the face plate has a plurality of through holes configured for uniform distribution of process gases.

20. The temperature controlled showerhead assembly of claim 1, wherein the heating element is removable from the temperature controlled showerhead assembly.

21. The temperature controlled showerhead assembly of claim 1, wherein the heat exchanger is removable from the temperature controlled showerhead assembly.

22. The temperature controlled showerhead assembly of claim 1, wherein the temperature sensor is removable from the temperature controlled showerhead assembly.

23. A temperature controlled showerhead assembly for use in a chemical vapor deposition (CVD) apparatus, the temperature controlled showerhead assembly comprising:

a heat conductive stem comprising aluminum 6061;

a back plate comprising aluminum 6061 and having an average thickness of at least about 2 inches, wherein the back plate is attached to the heat conductive stem;

a face plate comprising aluminum 6061 and having an average thickness of between about 0.5 inches and 1 inch, wherein the face plate is thermally coupled to the heat conductive stem and attached to the back plate with an average gap between the face plate and the back plate of between about 0.25 inch and 0.75 inch;

a heating element comprising two cartridge heaters each configured to provide power output of at least about 500 W, wherein the heating element is thermally coupled to the heat conductive stem;

a heat exchanger thermally coupled to the heat conductive stem; and

a temperature sensor thermally coupled to the face plate,

wherein the temperature controlled showerhead is configured to maintain the temperature of the face plate within a predetermined range by providing heat transfer paths between the heating element and the face plate and between the heat exchanger and the face plate.

24. A Chemical Vapor Deposition (CVD) system for depositing a semiconductor material on a partially manufactured semiconductor substrate, the CVD system comprising:

a processing chamber configured to maintain a low pressure environment within the processing chamber;

a substrate support for holding the partially manufactured semiconductor substrate and maintaining a temperature of the partially manufactured semiconductor substrate at between about 500°

C. and 600°

C.;

a temperature controlled showerhead assembly comprising;

a heat conductive stem;

a back plate attached to the heat conductive stem;

a face plate thermally coupled to the heat conductive stem and attached to the back plate;

a heating element thermally coupled to the heat conductive stem;

a heat exchanger thermally coupled to the heat conductive stem; and

a temperature sensor thermally coupled to the face plate,

wherein the temperature controlled showerhead is configured to maintain the temperature of the face place within a predetermined range by providing heat transfer paths between the heating element and the face plate and between the heat exchanger and the face place.

25. The CVD system of claim 24, wherein the face plate of the temperature controlled showerhead is positioned within about 0.7 inches from the substrate support and wherein the temperature controlled showerhead is configured to maintain the temperature of the face plate at between about 200°

C. and 300°

C. while the substrate support is maintained at between about 500°

C. and 550°

C.

26. The CVD system of claim 24, further comprising an in-situ plasma generator.

27. The CVD system of claim 24, wherein the CVD system is a single-station deposition system.

28. The CVD system of claim 24, further comprising a second substrate support.

29. The CVD system of claim 28, wherein the substrate support and the second substrate support are positioned inside the processing chamber and are configured to be exposed to the same low pressure environment.

30. The CVD system of claim 28, further comprising a second processing chamber configured to maintain a different environment than the processing chamber, wherein the substrate support is positioned in the processing chamber and the second substrate support is positioned in the second processing chamber.