MULTIFUNCTIONAL HEATER/CHILLER PEDESTAL FOR WIDE RANGE WAFER TEMPERATURE CONTROL
First Claim
1. A pedestal for a semiconductor processing chamber, comprising:
- a substrate support comprising a conductive material and having a support surface for receiving a substrate;
a resistive heater encapsulated within the substrate support;
a hollow shaft coupled to the substrate support at a first end and to a mating interface at a second end, the hollow shaft comprising;
a shaft body having;
a hollow core; and
a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.
1 Assignment
0 Petitions
Accused Products
Abstract
Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.
156 Citations
20 Claims
-
1. A pedestal for a semiconductor processing chamber, comprising:
-
a substrate support comprising a conductive material and having a support surface for receiving a substrate; a resistive heater encapsulated within the substrate support; a hollow shaft coupled to the substrate support at a first end and to a mating interface at a second end, the hollow shaft comprising; a shaft body having; a hollow core; and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 17)
-
-
12. A pedestal for a semiconductor processing chamber, comprising:
-
a substrate support comprising a conductive material and having a support surface for receiving a substrate; a hollow shaft coupled with the substrate support comprising; a shaft body having a hollow core; and an active cooling system providing for active control of the temperature of a substrate positioned on the support surface comprising; a heating element encapsulated within the substrate support; and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein a heat control gap is positioned between the heating element and the ring-shaped cooling channel. - View Dependent Claims (13, 14, 15, 16)
-
-
18. A plasma processing system, comprising:
-
a processing chamber body having; sidewalls; a bottom wall; and an interior sidewall defining a pair of processing regions; and a pedestal disposed in at least one of the pair of processing regions;
comprising;a substrate support comprising a conductive material and having a support surface for receiving a substrate; a hollow shaft coupled with the substrate support comprising; a shaft body having a hollow core; and an active cooling system providing for active control of the temperature of a substrate positioned on the support surface comprising; a heating element encapsulated within the substrate support; and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein a heat control gap is positioned between the heating element and the ring-shaped cooling channel; and a radio frequency source is coupled with the processing chamber body. - View Dependent Claims (19, 20)
-
Specification