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ABBREVIATED EPITAXIAL GROWTH MODE (AGM) METHOD FOR REDUCING COST AND IMPROVING QUALITY OF LEDs AND LASERS

  • US 20110147703A1
  • Filed: 12/17/2010
  • Published: 06/23/2011
  • Est. Priority Date: 12/17/2009
  • Status: Active Grant
First Claim
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1. A method of growing a GaN template on a substrate, comprising:

  • performing an abbreviated GaN growth mode (AGGM) on a patterned sapphire substrate, said AGGM including;

    depositing a thin low-temperature GaN layer on said substrate; and

    depositing a thick high-temperature GaN layer on said thin layer.

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