Medium Scale Carbon Nanotube Thin Film Integrated Circuits on Flexible Plastic Substrates
First Claim
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1. An electronic device comprising:
- a first electrode;
a second electrode; and
a patterned layer of randomly oriented or partially aligned carbon nanotubes provided in one or more interconnected carbon nanotube networks positioned between and in electrical contact with said first electrode and said second electrode, said patterned layer having a thickness less than or equal to 10 nanometers and having one or more void regions without carbon nanotubes;
wherein said one or more void regions provided between said first and second electrodes reduces by at least 20% the number of purely metallic conductive pathways from said first electrode and second electrode in said one or more interconnected carbon nanotube networks.
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Abstract
The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.
232 Citations
56 Claims
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1. An electronic device comprising:
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a first electrode; a second electrode; and a patterned layer of randomly oriented or partially aligned carbon nanotubes provided in one or more interconnected carbon nanotube networks positioned between and in electrical contact with said first electrode and said second electrode, said patterned layer having a thickness less than or equal to 10 nanometers and having one or more void regions without carbon nanotubes;
wherein said one or more void regions provided between said first and second electrodes reduces by at least 20% the number of purely metallic conductive pathways from said first electrode and second electrode in said one or more interconnected carbon nanotube networks. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 47, 48, 49, 50, 51, 52, 55, 56)
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31. A method for making an electronic device comprising the steps of:
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providing a first electrode; providing a second electrode; and providing a patterned layer of randomly oriented or partially aligned carbon nanotubes provided in one or more interconnected carbon nanotube networks positioned between and in electrical contact with said first electrode and said second electrode, said patterned layer having a thickness less than or equal to 10 nanometers and having one or more void regions in said patterned layer without carbon nanotubes;
wherein said one or more void regions provided between said first and second electrodes reduces by at least 20% the number of purely metallic conductive pathways from said first and second electrodes in said one or more interconnected carbon nanotube networks. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
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42. An transistor comprising:
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a source electrode; a drain electrode; a gate electrode; a patterned layer of randomly oriented or partially aligned carbon nanotubes provided in one or more interconnected carbon nanotube networks positioned between and in electrical contact with said source electrode and said drain electrode, said patterned layer having a thickness less than or equal to 10 nanometers and having one or more void regions in said patterned layer without carbon nanotubes;
wherein said one or more void regions provided between said first and second electrodes reduces by at least 20% the number of purely metallic conductive pathways between said source electrode and said drain electrode in said one or more interconnected carbon nanotube networks; anda dielectric layer positioned between said patterned layer and said gate electrode. - View Dependent Claims (43, 44, 45, 53, 54)
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46. A method for reducing the number of purely metallic conductive pathways in one or more interconnected carbon nanotube networks provided between a first electrode and second electrode, said method comprising the steps of:
providing a patterned layer of randomly oriented or partially aligned carbon nanotubes provided in one or more interconnected carbon nanotube networks positioned between and in electrical contact with said first electrode and said second electrode, said patterned layer having a thickness less than or equal to 10 nanometers and having one or more void regions in said patterned layer without carbon nanotubes;
wherein said one or more void regions provided between said first and second electrodes reduces by at least 20% the number of purely metallic conductive pathways between said first electrode and said second electrode in said one or more interconnected carbon nanotube networks.
Specification