SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor layer including a channel formation region and source and drain regions;
a gate insulating layer over the oxide semiconductor layer;
a gate electrode layer over the gate insulating layer;
an insulating layer over the gate electrode layer; and
a source electrode layer and a drain electrode layer over the insulating layer,wherein the source and drain regions include oxygen-defect-inducing factors.
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Abstract
A transistor including an oxide semiconductor, which has good on-state characteristics, and a high-performance semiconductor device including a transistor capable of high-speed response and high-speed operation. In the transistor including an oxide semiconductor, oxygen-defect-inducing factors are introduced (added) into an oxide semiconductor layer, whereby the resistance of a source and drain regions are selectively reduced. Oxygen-defect-inducing factors are introduced into the oxide semiconductor layer, whereby oxygen defects serving as donors can be effectively formed in the oxide semiconductor layer. The introduced oxygen-defect-inducing factors are one or more selected from titanium, tungsten, and molybdenum, and are introduced by an ion implantation method.
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Citations
17 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor layer including a channel formation region and source and drain regions; a gate insulating layer over the oxide semiconductor layer; a gate electrode layer over the gate insulating layer; an insulating layer over the gate electrode layer; and a source electrode layer and a drain electrode layer over the insulating layer, wherein the source and drain regions include oxygen-defect-inducing factors. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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an oxide semiconductor layer including a channel formation region, a first region, and a second region over a substrate; a gate insulating layer over the oxide semiconductor layer; a gate electrode layer overlapping over the gate insulating layer; an insulating layer over the gate electrode layer; and a source electrode layer and a drain electrode layer over the insulating layer, wherein the first region is a source and drain regions, and wherein the first region and the second region include oxygen-defect-inducing factors, wherein the second region is provided between the channel formation region and the first region and has higher resistance than the first region. - View Dependent Claims (6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over a substrate; forming a gate insulating layer over the oxide semiconductor layer; forming a gate electrode layer over the gate insulating layer; forming a channel formation region, a source region, and a drain region in the oxide semiconductor layer by performing treatment of introducing oxygen-defect-inducing factors on the oxide semiconductor layer for selectively forming oxygen defects; forming an insulating layer over the gate electrode layer; and forming a source electrode layer and a drain electrode layer over the insulating layer. - View Dependent Claims (11, 12, 13)
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14. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over a substrate; forming a gate insulating layer over the oxide semiconductor layer; forming a gate electrode layer over the gate insulating layer; forming an insulating layer over the gate electrode layer; forming a first region functioning as a source and drain regions, a second region having higher resistance than the first region, and a channel formation region by performing treatment of introducing oxygen-defect-inducing factors on the oxide semiconductor layer for selectively forming oxygen defects; and forming a source electrode layer and a drain electrode layer over the insulating layer. - View Dependent Claims (15, 16, 17)
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Specification