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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20110147738A1
  • Filed: 12/15/2010
  • Published: 06/23/2011
  • Est. Priority Date: 12/18/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor layer including a channel formation region and source and drain regions;

    a gate insulating layer over the oxide semiconductor layer;

    a gate electrode layer over the gate insulating layer;

    an insulating layer over the gate electrode layer; and

    a source electrode layer and a drain electrode layer over the insulating layer,wherein the source and drain regions include oxygen-defect-inducing factors.

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