WAFER LEVEL LED PACKAGE STRUCTURE FOR INCREASING LIGHT-EMITTING EFFICIENCY AND HEAT-DISSIPATING EFFECT AND METHOD FOR MANUFACTURING THE SAME

• US 20110147774A1
• Filed: 04/13/2010
• Published: 06/23/2011
• Est. Priority Date: 12/21/2009
• Status: Abandoned Application

• Current Assignee: Harvatek Corporation
• Original Assignee: Harvatek Corporation
• Inventors: CHEN, JACK, HSIAO, SUNG-YI, WANG, BILY
• Application Number:
  US12/759,077
• Publication Number:
  US 20110147774A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

A wafer level LED package structure includes a light-emitting unit, a reflecting unit, a first conductive unit and a second conductive unit. The light-emitting unit has a substrate body, a light-emitting body disposed on the substrate body, a positive and a negative conductive layers formed on the light-emitting body, and a light-emitting area formed in the light-emitting body. The reflecting unit has a reflecting layer formed between the positive and the negative conductive layers and on the substrate body for covering external sides of the light-emitting body. The first conductive unit has a first positive conductive layer formed on the positive conductive layer and a first negative conductive layer formed on the negative conductive layer. The second conductive unit has a second positive conductive structure formed on the first positive conductive layer and a second negative conductive structure formed on the first negative conductive layer.

Claims

1. A wafer level LED package structure for increasing light-emitting efficiency and heat-dissipating effect, comprising:

a light-emitting unit having a substrate body, a light-emitting body disposed on the substrate body, a positive conductive layer and a negative conductive layer both formed on the light-emitting body, and a light-emitting area formed in the light-emitting body;

a reflecting unit having a reflecting layer formed between the positive conductive layer and the negative conductive layer and on the substrate body for covering external sides of the light-emitting body;

a first conductive unit having a first positive conductive layer formed on the positive conductive layer and a first negative conductive layer formed on the negative conductive layer; and

a second conductive unit having a second positive conductive structure formed on the first positive conductive layer and a second negative conductive structure formed on the first negative conductive layer.

2. The wafer level LED package structure as claimed in claim 1, wherein the substrate body is an Al₂O₃ substrate, and the light-emitting body has a negative GaN conductive layer formed on the Al₂O₃ substrate and a positive GaN conductive layer formed on the negative GaN conductive layer;

the positive conductive layer is formed on the positive GaN conductive layer, the negative conductive layer is formed on the negative GaN conductive layer, and one part of the reflecting layer is formed on one part of a top surface of the negative GaN conductive layer, on one part of a top surface of the positive GaN conductive layer and between the positive conductive layer and the negative conductive layer.

3. The wafer level LED package structure as claimed in claim 1, wherein the positive conductive layer has a positive conductive area formed on a top surface thereof, the negative conductive layer has a negative conductive area formed on a top surface thereof, and one part of the positive conductive area and one part of the negative conductive area are covered by one part of the reflecting layer.

4. The wafer level LED package structure as claimed in claim 3, wherein the first positive conductive layer and the first negative conductive layer are insulated from each other, the first positive conductive layer is formed on another part of the positive conductive area and on one part of the reflecting layer, and the first negative conductive layer is formed on another part of the negative conductive area and on one part of the reflecting layer.

5. The wafer level LED package structure as claimed in claim 1, wherein the reflecting layer is a DBR (Distributed Bragg Reflector) that is formed by plasma.

6. The wafer level LED package structure as claimed in claim 1, wherein the second positive conductive structure is composed of at least two conductive layers stacked upon each other by electroplating, the second negative conductive structure is composed of at least two conductive layers stacked upon each other by electroplating, the at least two conductive layers respectively are a Nickel layer and a Gold/Tin layer, and the Gold/Tin layer is formed on the Nickel layer.

7. The wafer level LED package structure as claimed in claim 1, wherein the second positive conductive structure is composed of at least three conductive layers stacked upon each other by electroplating, the second negative conductive structure is composed of at least three conductive layers stacked upon each other by electroplating, the at least three conductive layers respectively are a Copper layer, a Nickel layer and a Gold/Tin layer, the Nickel layer is formed on the copper layer, and the Gold/Tin layer is formed on the Nickel layer.

8. The wafer level LED package structure as claimed in claim 1, further comprising:

a phosphor layer formed on a bottom side of the light-emitting unit or on a bottom side and a peripheral side of the light-emitting unit.

9. A method for making a wafer level LED package structure for increasing light-emitting efficiency and heat-dissipating effect, comprising:

providing a wafer having a plurality of light-emitting units, wherein each light-emitting unit has a substrate body, a light-emitting body disposed on the substrate body, a positive conductive layer and a negative conductive layer both formed on the light-emitting body, and a light-emitting area formed in the light-emitting body;

cutting one part of the light-emitting body in order to expose peripheral area of a top surface of the substrate body;

forming a reflecting layer between the positive conductive layer and the negative conductive layer and on the peripheral area of the top surface of the substrate body in order to cover external sides of the light-emitting body and expose the positive conductive layer and the negative conductive layer;

respectively forming a plurality of first conductive units on the light-emitting units, wherein each first conductive unit has a first positive conductive layer formed on the corresponding positive conductive layer and a first negative conductive layer formed on the corresponding negative conductive layer; and

respectively forming a plurality of second conductive units on the first conductive units, wherein each second conductive unit has a second positive conductive structure formed on the corresponding first positive conductive layer and a second negative conductive structure formed on the corresponding first negative conductive layer.

10. The method as claimed in claim 9, wherein the substrate body is an Al₂O₃ substrate, and the light-emitting body has a negative GaN conductive layer formed on the Al₂O₃ substrate and a positive GaN conductive layer formed on the negative GaN conductive layer;

the positive conductive layer is formed on the positive GaN conductive layer, the negative conductive layer is formed on the negative GaN conductive layer, and one part of the reflecting layer is formed on one part of a top surface of the negative GaN conductive layer, on one part of a top surface of the positive GaN conductive layer and between the positive conductive layer and the negative conductive layer.

11. The method as claimed in claim 9, wherein the positive conductive layer has a positive conductive area formed on a top surface thereof, the negative conductive layer has a negative conductive area formed on a top surface thereof, and one part of the positive conductive area and one part of the negative conductive area are covered by one part of the reflecting layer.

12. The method as claimed in claim 11, wherein the first positive conductive layer and the first negative conductive layer are insulated from each other, the first positive conductive layer is formed on another part of the positive conductive area and on one part of the reflecting layer, and the first negative conductive layer is formed on another part of the negative conductive area and on one part of the reflecting layer.

13. The method as claimed in claim 9, wherein the reflecting layer is a DBR (Distributed Bragg Reflector) that is formed by plasma.

14. The method as claimed in claim 9, wherein the second positive conductive structure is composed of at least two conductive layers stacked upon each other by electroplating, the second negative conductive structure is composed of at least two conductive layers stacked upon each other by electroplating, the at least two conductive layers respectively are a Nickel layer and a Gold/Tin layer, and the Gold/Tin layer is formed on the Nickel layer.

15. The method as claimed in claim 9, wherein the second positive conductive structure is composed of at least three conductive layers stacked upon each other by electroplating, the second negative conductive structure is composed of at least three conductive layers stacked upon each other by electroplating, the at least three conductive layers respectively are a Copper layer, a Nickel layer and a Gold/Tin layer, the Nickel layer is formed on the copper layer, and the Gold/Tin layer is formed on the Nickel layer.

16. The method as claimed in claim 9, wherein the step of respectively forming the first conductive units on the light-emitting units further comprises:

forming a first conductive layer on the positive conductive layer, the negative conductive layer and the reflecting layer of each light-emitting unit; and

removing one part of the first conductive layer to form the first positive conductive layer and the first negative conductive layer of each first conductive unit.

17. The method as claimed in claim 16, wherein the first conductive layer is formed by electroless plating such as evaporation or sputtering, and one part of the first conductive layer is removed by etching.

18. The method as claimed in claim 9, wherein the step of respectively forming the second conductive units on the first conductive units further comprises:

forming a second conductive structure on one part of the reflecting layer of each light-emitting unit and on the first positive conductive layer and the first negative conductive layer of each light-emitting unit; and

removing one part of the second conductive structure to form the second positive conductive structure and the second negative conductive structure of each second conductive unit.

19. The method as claimed in claim 9, wherein after the step of respectively forming a plurality of second conductive units on the first conductive units, the method further comprises:

overturning the wafer and placing the wafer on a heatproof polymer substrate;

forming a phosphor layer on a bottom side of each light-emitting unit; and

cutting the wafer in order to form a plurality of LED package structure.

20. The method as claimed in claim 9, wherein after the step of respectively forming a plurality of second conductive units on the first conductive units, the method further comprises:

overturning the wafer and placing the wafer on a heatproof polymer substrate;

cutting the wafer to form a plurality of grooves on a top surface of the wafer and between the light-emitting units;

filling phosphor substance into the grooves and on a top surface of the light-emitting units;

solidifying the phosphor substance to form a phosphor layer on a bottom side and a peripheral side of each light-emitting unit; and

cutting the phosphor layer that is disposed in the grooves and cutting the wafer that is disposed under the grooves in order to form a plurality of LED package structure.