Semiconductor Component and Method for Producing a Semiconductor Component
First Claim
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1. A semiconductor component, comprising:
- at least one field effect transistor disposed along a trench in a semiconductor region, the at least one field effect transistor having a source region of a first conductivity type, a drain region of the first conductivity type, and a body region of a second conductivity type between the source region and the drain region in the semiconductor region;
a gate electrode in the trench along the body region, said gate electrode being arranged in a manner isolated from the body region by a gate dielectric;
at least one locally delimited dopant region of the first conductivity type in the semiconductor region, said at least one locally delimited dopant region extending from or over a pn junction between the source region and the body region or between the drain region and the body region, part of the dopant region lying in the body region opposite part of the gate electrode such that a gap in the body region between the pn junction and the gate electrode is bridged by the dopant region.
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Abstract
A semiconductor component includes at least one field effect transistor disposed along a trench in a semiconductor region and has at least one locally delimited dopant region in the semiconductor region. The at least one locally delimited dopant region extends from or over a pn junction between the source region and the body region of the transistor or between the drain region and the body region of the transistor into the body region as far as the gate electrode, such that a gap between the pn junction and the gate electrode in the body region is bridged by the locally delimited dopant region.
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Citations
10 Claims
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1. A semiconductor component, comprising:
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at least one field effect transistor disposed along a trench in a semiconductor region, the at least one field effect transistor having a source region of a first conductivity type, a drain region of the first conductivity type, and a body region of a second conductivity type between the source region and the drain region in the semiconductor region; a gate electrode in the trench along the body region, said gate electrode being arranged in a manner isolated from the body region by a gate dielectric; at least one locally delimited dopant region of the first conductivity type in the semiconductor region, said at least one locally delimited dopant region extending from or over a pn junction between the source region and the body region or between the drain region and the body region, part of the dopant region lying in the body region opposite part of the gate electrode such that a gap in the body region between the pn junction and the gate electrode is bridged by the dopant region. - View Dependent Claims (2, 3, 4)
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5. A method for producing a semiconductor component, comprising:
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forming a trench in a semiconductor region, the trench having an upper trench region and a lower trench region, the upper trench region being wider than the lower trench region such that a step is formed in the semiconductor region; and introducing a dopant into the step to form a locally delimited dopant region in the semiconductor region. - View Dependent Claims (6, 7, 8, 9, 10)
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Specification