SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

• US 20110147863A1
• Filed: 02/28/2011
• Published: 06/23/2011
• Est. Priority Date: 07/02/2007
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Sugiura, Kazuhiko, FUJII, Tetsuo
• Granted Patent: US 8,264,051 B2
• Time in Patent Office: Days
• US Class Current: 257/418
• CPC Class Codes: B81B 2207/07 Interconnects
• CPC Class Codes: B81B 2207/097 Interconnects arranged on the substrate or the lid, and covered by the package seal
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05008 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/0616 Random array, i.e. array with no symmetry
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.

Claims

1-22. -22. (canceled)

23. A semiconductor device comprising:

a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element, a peripheral portion, which surrounds the sensor structure, and a connection portion for connecting to an external element; and

a plate-shaped cap element bonded to the surface of the sensor element, wherein;

the cap element has a silicon substrate, a first insulation film on the silicon substrate, a first conduction contact portion and a wiring pattern portion facing the sensor element;

the wiring pattern portion includes;

a first wiring layer disposed on the first insulation film;

a second insulation film disposed on the first wiring layer;

a second wiring layer disposed on the second insulation film; and

a second conduction contact portion;

the first insulation film has a first opening for exposing the silicon substrate via the first opening;

the first conduction contact portion is disposed in the first opening, and electrically connects the silicon substrate and the first wiring layer;

the second wiring layer includes a wiring part, which is disposed on the first wiring layer exposed from the second insulation film, and a hermetically sealing part, which has a ring shape and faces the peripheral portion;

the second insulation film has a second opening so that the first wiring layer is exposed from the second insulation film in the second opening;

the second conduction contact portion is disposed in the second opening;

the second conduction contact portion electrically connects the first wiring layer and the hermetically sealing part so that the silicon substrate is electrically coupled with the peripheral portion via the first conduction contact portion, the first wiring layer, the second conduction contact portion and the hermetically sealing part;

the hermetically sealing part is bonded to the peripheral portion so that the sensor structure is sealed and accommodated in a space defined by the cap element and the sensor element;

the wiring part is coupled with the sensor structure;

the connection portion is disposed on an outside of the space; and

the wiring part is further coupled with the connection portion so that the sensor structure is coupled with the external element via the connection portion and the wiring part.

24. The semiconductor device of claim 23, wherein:

the cap element further includes an IC circuit portion, which is disposed in a surface portion of the cap element and opposite to the sensor element.

25. The semiconductor device of claim 23, wherein:

the cap element further includes an IC circuit portion, which is disposed in a surface portion of the cap element and faces the sensor element.

26. The semiconductor device of claim 23, wherein:

the cap element further includes a recessed part, which faces at least the sensor structure, and is not disposed on the wiring part.

27. The semiconductor device of claim 23 wherein:

the sensor element has an SOI substrate comprising a first silicon layer, a second silicon layer and an insulation layer;

the sensor structure is disposed in the first silicon layer;

the insulation layer is sandwiched between the first silicon layer and the second silicon layer;

the peripheral portion is disposed in the first silicon layer;

the insulation layer has a third opening, in which a substrate contact part is disposed; and

the substrate contact part is disposed between the peripheral portion and the second silicon layer to electrically connect the peripheral portion and the second silicon layer.

28. The semiconductor device of claim 23, wherein:

the sensor element has a third wiring layer on the surface portion of the sensor element; and

the cap element is bonded to the third wiring layer.

29. The semiconductor device of claim 23, wherein:

the sensor structure includes a movable electrode movable within the sensor element;

the first wiring layer faces the movable electrode; and

the sensor element detects distance change between the first wiring layer and the movable electrode so that the sensor element detects a physical quantity in a direction perpendicular to the surface of the sensor element.

30. The semiconductor device of claim 23, wherein:

the sensor structure includes a movable electrode movable within the sensor element;

the wiring pattern portion further includes a counter electrode;

the counter electrode is disposed on the second insulation film, and faces the movable electrode; and

the sensor element detects distance change between the movable electrode and the counter electrode, which corresponds to the distance change between the second wiring layer and the movable electrode.

31. A method for manufacturing a semiconductor device, the method comprising:

preparing a sensor element having a plate shape with a surface, forming a sensor structure in a surface portion of the sensor element, and forming a peripheral portion in another surface portion of the sensor element so as to surround the sensor structure;

preparing a plate-shaped cap element having a wiring pattern portion, and patterning the wiring pattern portion to bond with the sensor element in such a manner that the sensor structure of the sensor element is connected to an external element with the wiring pattern portion; and

bonding the cap element and the sensor element to connect the wiring pattern portion to the sensor structure.

32. The method of claim 31, wherein:

the preparing the cap element includes;

forming a first wiring layer on the cap element, and patterning the first wiring layer to connect the sensor structure and the external element;

forming a first insulation film on the first wiring layer, and forming an opening in the first insulation film to expose the first wiring layer via the opening; and

forming a second wiring layer with a wiring part on the first wiring layer exposed from the first insulation film in the opening.

33. The method of claim 32, wherein:

the preparing the sensor element includes forming a peripheral portion on the surface of the sensor element to surround the sensor structure;

the preparing the cap element includes forming a hermetically sealing part having an annular shape on the first insulation film, the hermetically sealing part which faces the peripheral portion, and is electrically insulated from the first wiring layer; and

the bonding the cap element and the sensor element includes;

bonding the hermetically sealing part to the peripheral portion; and

sealing the sensor structure in a space defined by the cap element and the sensor element.

34. A method for manufacturing semiconductor devices, the method comprising:

preparing a sensor wafer having a plurality of sensor elements, each of which has a plate shape with a surface, forming a sensor structure in a surface portion of each sensor element, and forming a peripheral portion in another surface portion of each sensor element so as to surround the sensor structure;

preparing a cap wafer having a plurality of plate-shaped cap elements, each of which has a wiring pattern portion to be bonded to a respective sensor element, and patterning each of the wiring pattern portions to connect the peripheral portion of a respective sensor element and a respective sensor structure;

bonding the sensor wafer and the cap wafer to connect each wiring pattern portion to a respective sensor structure; and

dividing the cap wafer and the sensor wafer into a plurality of sensor chips.

35. A method for manufacturing a semiconductor device, the method comprising:

preparing a first chip having a plate shape with a surface, forming a first IC circuit portion in a surface portion of the first chip, and forming a first wiring pattern portion on the first IC circuit portion, the first wiring pattern portion comprising a first insulating film, a first wiring layer, a second insulating film and a second wiring layer, wherein the first insulating film is formed on the first IC circuit portion, the first wiring layer is patterned on the first insulating film to be connected to the first IC circuit portion, the second insulating film is formed on the first wiring layer and has a first opening to expose the first wiring layer via the first opening, and the second wiring layer is formed on the first wiring layer exposed from the second insulating film via the opening;

preparing a second chip having a plate shape with a surface, forming a second IC circuit portion in a surface portion of the second chip, and forming a second wiring pattern portion on the second IC circuit portion, the second wiring pattern portion comprising a third insulating film, a third wiring layer, a fourth insulating film and a fourth wiring layer, wherein the third insulating film is formed on the second IC circuit portion, the third wiring layer is patterned on the third insulating film to be connected to the second IC circuit portion, the fourth insulating film is formed on the third wiring layer and has a second opening to expose the third wiring layer via the second opening, and the fourth wiring layer is formed on the third wiring layer exposed from the fourth insulating film via the second opening; and

facing the surface of the first chip and the surface of the second chip, and bonding the second wiring layer of the first wiring pattern portion of the first chip and the fourth wiring layer of the second wiring pattern portion of the second chip.