IMAGE SENSOR WITH WELL BOUNCE CORRECTION

• US 20110147875A1
• Filed: 12/21/2009
• Published: 06/23/2011
• Est. Priority Date: 12/21/2009
• Status: Active Grant

• Current Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Original Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Inventors: Parks, Christopher, Compton, John T.
• Granted Patent: US 8,106,427 B2
• Time in Patent Office: Days
• US Class Current: 257/443
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes

Abstract

An image sensor includes a pixel array having photoactive pixels and dark reference pixels. The photoactive pixels can be configured in a sub-array within the pixel array. Well contacts are only placed along opposing sides or edges of the sub-array of photoactive pixels or along opposing sides or edges of the pixel array.

Claims

1. An image sensor comprising:

a substrate of a first conductivity type;

a plurality of pixels formed in a well of a second conductivity type opposite the first conductivity type, wherein the plurality of pixels are arranged in an array; and

a plurality of well contacts for providing a bias voltage to the well of the second conductivity type, wherein the plurality of well contacts are only disposed on two opposing sides of the array with no well contacts disposed on the remaining sides of the array or within the array.

2. The image sensor of claim 1, wherein the plurality of pixels includes photoactive pixels and dark reference pixels.

3. The image sensor of claim 1, wherein the plurality of well contacts are only disposed along an upper side and a lower side of the array.

4. The image sensor of claim 1, wherein the plurality of well contacts are only disposed along a right side and a left side of the array.

5. An image capture device comprising:

An image sensor including;

a substrate of a first conductivity type;

a plurality of pixels formed in a well of a second conductivity type opposite the first conductivity type, wherein the plurality of pixels are arranged in an array; and

a plurality of well contacts for providing a bias voltage to the well of the second conductivity type, wherein the plurality of well contacts are only disposed on two opposing sides of the array with no well contacts disposed on the remaining sides of the array or within the array.

6. The image capture device of claim 5, wherein the plurality of pixels includes photoactive pixels and dark reference pixels.

7. The image capture device of claim 5, wherein the plurality of well contacts are only disposed along an upper side and a lower side of the array.

8. The image capture device of claim 5, wherein the plurality of well contacts are only disposed along a right side and a left side of the array.