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VARIABLE ATTENUATOR HAVING STACKED TRANSISTORS

  • US 20110148501A1
  • Filed: 12/23/2010
  • Published: 06/23/2011
  • Est. Priority Date: 12/23/2009
  • Status: Active Grant
First Claim
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1. An attenuator, comprising:

  • a first attenuation circuit having a first variable attenuation level that is adjustable within a first continuous attenuation range, the first attenuation circuit, comprising;

    a first series connected attenuation circuit segment having a first plurality of stacked transistors, the first plurality of stacked transistors being coupled to provide the first series connected attenuation circuit segment with a first variable impedance level having a first continuous impedance range;

    a first shunt connected attenuation circuit segment having a second plurality of stacked transistors, the second plurality of stacked transistors being coupled to provide the first shunt connected attenuation circuit segment with a second variable impedance level having a second continuous impedance range;

    wherein the first variable attenuation level is based on the first variable impedance level and the second variable impedance level;

    a control circuit adapted to receive an attenuation control signal, the control circuit being operably associated with the first plurality of stacked transistors to control the first variable impedance level based on a signal level of the attenuation control signal and the control circuit being operably associated with the second plurality of stacked transistors to control the second variable impedance level based on the signal level of the attenuation control signal.

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