METHOD AND MAGNETIC TRANSFER STAMP FOR TRANSFERRING SEMICONDUCTOR DICE USING MAGNETIC TRANSFER PRINTING TECHNIQUES

• US 20110151588A1
• Filed: 12/13/2010
• Published: 06/23/2011
• Est. Priority Date: 12/17/2009
• Status: Abandoned Application

• Current Assignee: Cooledge Lighting Inc.
• Original Assignee: Cooledge Lighting Inc.
• Inventors: Schick, Philippe Michael, Ashdown, Ian, Speier, Ingo, Sheen, Calvin Wade
• Application Number:
  US12/966,997
• Publication Number:
  US 20110151588A1
• Time in Patent Office: Days
• US Class Current: 438/3
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/838 Bonding techniques
• CPC Class Codes: H01L 2224/95001 involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/95136 involving guiding structures, e.g. shape matching, spacers or supporting members
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01011 Sodium [Na]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01018 Argon [Ar]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01026 : Iron [Fe]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01064 : Gadolinium [Gd]
• CPC Class Codes: H01L 2924/01066 : Dysprosium [Dy]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01088 : Radium [Ra]
• CPC Class Codes: H01L 2924/01094 : Plutonium [Pu]
• CPC Class Codes: H01L 2924/01105 : Rare earth metals
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/19041 : being a capacitor

Abstract

Releasable semiconductor dice are deposited with a magnetic layer and held by magnetic forces to a magnetic or electromagnetic transfer stamp for the transfer of the dice from a host substrate directly or indirectly to a target substrate.

Claims

1. A method for transferring semiconductor dice from a host substrate to a target substrate, comprising the steps of:

providing a host substrate with semiconductor dice having magnetic portions;

magnetizing regions of a selected one of a transfer stamp or a target substrate; and

transferring the semiconductor dice from the host substrate to the magnetized regions of the selected one of the transfer stamp or target substrate by a magnetic force between the magnetized regions and portions when the host substrate is positioned adjacent to the selected one of the transfer stamp or target substrate,

wherein said transferring, when the selected one is the transfer stamp, also includes releasing the semiconductor dice from the transfer stamp to the target substrate.

2. The method of claim 1 wherein one or both of said magnetic regions of the transfer stamp and the magnetic portions of the semiconductor dice on the host substrate are permanent magnets.

3. The method of claim 1 wherein the selected one of the transfer stamp or target substrate includes spaced mesas formed thereon having said magnetized regions.

4. The method of claim 3 wherein each of the magnetized regions of the mesas is defined by a ferromagnetic coating that can be selectively magnetized or demagnetized.

5. The method of claim 4 wherein said ferromagnetic coating is selectively magnetized or demagnetized using a mechanically positioned magnetic write head.

6. The method of claim 4 wherein each of the magnetized regions of the mesas includes a solenoid operable to selectively generate a magnetic field to energize or de-energize the ferromagnetic coating.

7. The method of claim 1 wherein said magnetized portions are formed by a photoresist film with magnetic particles.

8. The method of claim 7 wherein said transferring the semiconductor dice to the selected one of the transfer stamp or the target substrate is by laser lift-off or release etching of the photoresist film.

9. A method for transferring semiconductor dice from a host substrate to a target substrate, comprising the steps of:

providing a host substrate with semiconductor dice having magnetic portions;

magnetizing regions of a transfer stamp;

removing semiconductor dice from a host substrate using the magnetized regions of the transfer stamp; and

releasing the semiconductor dice from the transfer stamp onto a target substrate by at least removing the transfer stamp or providing an adhesive force between the semiconductor dice and the target substrate that is greater than the magnetic force between the semiconductor dice and the transfer stamp.

10. The method of claim 9 wherein said magnetized regions of the transfer stamp are permanent magnets.

11. The method of claim 9 wherein the transfer stamp includes spaced mesas formed thereon having said magnetized regions.

12. The method of claim 11 wherein each of the magnetized regions of the mesas is defined by a ferromagnetic coating that can be selectively magnetized or demagnetized.

13. The method of claim 12 wherein the ferromagnetic coating is selectively magnetized or demagnetized using a mechanically positioned magnetic write head.

14. The method of claim 9 wherein said each of the magnetized regions of the mesas includes a solenoid operable to selectively generate a magnetic field to energize or de-energize the ferromagnetic coating.

15. The method of claim 9 wherein said magnetized portions are formed by a photoresist film with magnetic particles.

16. The method of claim 15 wherein said transferring the semiconductor dice to the transfer stamp is by laser lift-off or release etching of the photoresist film.

17. A transfer stamp for transferring semiconductor dice from a host substrate to a target substrate comprising:

a substrate; and

an array of magnetized regions thereon.

18. The stamp of claim 17 wherein said magnetized regions of the transfer stamp are permanent magnets on the transfer stamp.

19. The stamp of claim 17 wherein said substrate includes spaced mesas formed thereon having said magnetic regions.

20. The stamp of claim 19 wherein each of the magnetized regions of the mesas is defined by a ferromagnetic coating that can be selectively magnetized or demagnetized.

21. The stamp of claim 20 wherein said each of the magnetized regions of the mesas includes a solenoid operable to selectively generate a magnetic field to energize or de-energize the ferromagnetic coating.