SMOOTH SICONI ETCH FOR SILICON-CONTAINING FILMS

• US 20110151674A1
• Filed: 12/23/2009
• Published: 06/23/2011
• Est. Priority Date: 12/23/2009
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: TANG, JING, Yang, Dongqing, Ingle, Nitin
• Granted Patent: US 8,501,629 B2
• Time in Patent Office: Days
• US Class Current: 438/715
• CPC Class Codes: H01J 2237/3341 Reactive etching
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.

Claims

1. A method of etching a silicon-containing layer on a surface of a substrate in a substrate processing region of a substrate processing chamber, wherein the method leaves a relatively smooth post-etch surface, the method comprising:

flowing a fluorine-containing precursor and a hydrogen-containing precursor into a first remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the first plasma region to produce plasma effluents, wherein a flow rate of the fluorine-containing precursor and a flow rate of the hydrogen-containing precursor result in a hydrogen-to-fluorine atomic flow ratio of less than 1;

1 or greater than 5;

1;

etching the silicon-containing layer by flowing the plasma effluents into the substrate processing region while forming solid by-products on the surface of the substrate; and

sublimating the solid by-products to leave the relatively smooth post-etch surface by increasing a temperature of the substrate above a sublimation temperature of the solid by-products.

2. The method of claim 1 wherein the fluorine-containing precursor comprises at least one precursor selected from the group consisting of nitrogen trifluoride, hydrogen fluoride, diatomic fluorine, monatomic fluorine and fluorine-substituted hydrocarbons.

3. The method of claim 1 wherein the hydrogen-containing precursor comprises at least one precursor selected from the group consisting of atomic hydrogen, molecular hydrogen, ammonia, a hydrocarbon and an incompletely halogen-substituted hydrocarbon.

4. The method of claim 1 wherein the silicon-containing layer is maintained above or about 50°

C. during the etching operation.

5. The method of claim 1 wherein the operations of etching the silicon-containing layer and sublimating the solid by-products comprise a step and an integral number of steps are used to reduce the amount of material removed during each cycle.

6. The method of claim 5 wherein a total thickness of the silicon-containing layer is removed in three steps and each step removes 20% to 40% of the total thickness.

7. The method of claim 5 each step removes about 150 Å

or less from the silicon-containing layer.

8. The method of claim 1 wherein the flow rate of the fluorine-containing precursor and the flow rate of the hydrogen-containing precursor result in a hydrogen-to-fluorine atomic flow ratio of less than 1:

2.

9. The method of claim 1 wherein the flow rate of the fluorine-containing precursor and the flow rate of the hydrogen-containing precursor result in a hydrogen-to-fluorine atomic flow ratio of greater than 10:

1.

10. The method of claim 1 wherein the silicon-containing layer comprises silicon oxide.

11. A method of etching a silicon-containing layer on a surface of a substrate in a substrate processing region of a substrate processing chamber, wherein the method reduces a difference in etch-rate between a densely patterned area and a sparsely patterned area, the method comprising:

flowing a fluorine-containing precursor and a hydrogen-containing precursor into a first remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the first plasma region to produce plasma effluents, wherein a flow rate of the fluorine-containing precursor and a flow rate of the hydrogen-containing precursor result in a hydrogen-to-fluorine atomic flow ratio of less than 1;

1 or greater than 5;

1;

etching the silicon-containing layer in the densely patterned area and the sparsely patterned area by flowing the plasma effluents into the substrate processing region while forming solid by-products on the surface of the substrate; and

sublimating the solid by-products by increasing a temperature of the substrate above a sublimation temperature of the solid by-products.

12. The method of claim 11 wherein the fluorine-containing precursor comprises at least one precursor selected from the group consisting of nitrogen trifluoride, hydrogen fluoride, diatomic fluorine, monatomic fluorine and fluorine-substituted hydrocarbons.

13. The method of claim 11 wherein the hydrogen-containing precursor comprises at least one precursor selected from the group consisting of atomic hydrogen, molecular hydrogen, ammonia, a hydrocarbon and an incompletely halogen-substituted hydrocarbon.

14. The method of claim 11 wherein the operations of etching the silicon-containing layer and sublimating the solid by-products comprise a step and an integral number of steps are used to reduce the amount of material removed during each cycle.

15. The method of claim 14 wherein a total thickness is removed from the silicon-containing layer in three steps and each step removes 20% to 40% of the total thickness.

16. The method of claim 14 wherein each step removes about 100 Å

or less from the silicon-containing layer.

17. The method of claim 11 wherein the flow rate of the fluorine-containing precursor and the flow rate of the hydrogen-containing precursor result in a hydrogen-to-fluorine atomic flow ratio of less than 1:

4.

18. The method of claim 11 wherein the flow rate of the fluorine-containing precursor and the flow rate of the hydrogen-containing precursor result in a hydrogen-to-fluorine atomic flow ratio of greater than 20:

1.

19. The method of claim 11 wherein the silicon-containing layer comprises silicon oxide.

20. A method of etching a silicon-containing layer on a surface of a substrate in a substrate processing region of a substrate processing chamber, the method comprising:

flowing a fluorine-containing precursor and a hydrogen-containing precursor into a first remote plasma region fluidly coupled to the substrate processing region while forming a train of plasma pulses in the first plasma region to produce plasma effluents;

etching the silicon-containing layer by flowing the plasma effluents into the substrate processing region while forming solid by-products on the surface of the substrate; and

sublimating the solid by-products by increasing a temperature of the substrate above a sublimation temperature of the solid by-products.

21. The method of claim 20 wherein a flow rate of the fluorine-containing precursor and a flow rate of the hydrogen-containing precursor result in a hydrogen-to-fluorine atomic flow ratio of less than 1:

1 or greater than 5;

1.

22. The method of claim 20 wherein the train of plasma pulses are created by pulsing the plasma power applied to the first plasma region.

23. The method of claim 22 wherein a flow of the hydrogen-containing precursor and a flow of the fluorine-containing precursor are both constant during the etching operation.

24. The method of claim 20 wherein the train of plasma pulses are created by pulsing the flow of at least one of a flow of the fluorine-containing precursor and a flow of the hydrogen-containing precursor.

25. The method of claim 20 wherein the operation of sublimating the solid by-products comprises multiple substrate anneals which occur following each of the plasma pulses.

26. The method of claim 20 wherein a repetition frequency of the train of plasma pulses is between about 0.1 Hz and about 1.0 Hz.