WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS

• US 20110151677A1
• Filed: 12/21/2009
• Published: 06/23/2011
• Est. Priority Date: 12/21/2009
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Wang, Linlin, Mallick, Abhijit Basu, Ingle, Nitin K.
• Application Number:
  US12/643,196
• Publication Number:
  US 20110151677A1
• Time in Patent Office: Days
• US Class Current: 438/773
• CPC Class Codes: H01L 21/02326 into a nitride layer, e.g. changing SiN to SiON
• CPC Class Codes: H01L 21/02343 treatment by exposure to a liquid

Abstract

Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

Claims

1. A method of forming an oxidized dielectric material on a substrate, comprising:

forming a dielectric material on a substrate by a flowable CVD process;

curing the dielectric material disposed on the substrate;

performing a wet oxidation process on the dielectric material disposed on the substrate; and

forming an oxidized dielectric material on the substrate.

2. The method of claim 1, wherein forming the dielectric material on the substrate by a flowable CVD process further comprising:

supplying a gas mixture including at least a silicon containing precursor and a processing precursor into the flowable CVD processing chamber, wherein the silicon containing precursor is selected from a group consisting of silane, disilane, methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, tetraethoxysilane (TEOS), triethoxysilane (TES), octamethylcyclotetrasiloxane (OMCTS), tetramethyl-disiloxane (TMDSO), tetramethylcyclotetrasiloxane (TMCTS), tetramethyl-diethoxyl-disiloxane (TMDDSO), dimethyl-dimethoxyl-silane (DMDMS), trisillylamine (TSA), disillylamine (DSA), Si_xN_yH_zO_zz-containing precursors, Si_xN_yH_zCl_zz-containing precursors, or combinations thereof.

3. The method of claim 2, wherein the processing precursor is selected from a group consisting of H₂/N₂ mixture, N₂, NH₃, NH₄OH, N₂, N₂H₄ vapor, NO, N₂O, NO₂, H₂, O₃, O₂, H₂O₂, water vapor, or combinations thereof.

4. The method of claim 2, wherein the silicon containing precursor is trisillylamine (TSA) and the processing precursor is NH₃.

5. The method of claim 2, wherein the substrate temperature is controlled at less than 100 degrees Celsius.

6. The method of claim 1, wherein performing the wet oxidation process on the dielectric material further comprises:

wetting the substrate with a processing solution containing an oxygen source, wherein the oxygen source is selected from a group consisting of O₃, O₂, N₂O, NO₂, H₂O vapor or steam, H₂O₂, NH₄OH/H₂O₂ solution, dilution of HCl/H₂O₂ solution, or combinations thereof.

7. The method of claim 6, wherein the oxygen source is O₃.

8. The method of claim 6, wherein the processing solution is ozonated deionized (DI) water having an ozone concentration between about 1 milligram (mg) per liter (L) and about 1000 milligram (mg) per liter (L).

9. The method of claim 6, wherein the processing solution has a temperature controlled greater than 40 degrees Celsius but less than 100 degrees Celsius.

10. The method of claim 1, wherein performing the wet oxidation process on the dielectric material further comprises:

replacing silicon-nitrogen and/or silicon-hydrogen bonds in the dielectric material with silicon-oxide bonds.

11. The method of claim 1, further comprising:

performing a thermal anneal process on the oxidized dielectric material disposed on the substrate.

12. The method of claim 11, wherein the thermal anneal process further comprises:

annealing the substrate to a temperature between about 100 degrees Celsius and about 1000 degrees Celsius.

13. The method of claim 1, wherein the oxidized dielectric material is a silicon oxide layer.

14. A method of forming an oxidized dielectric material on a substrate, comprising:

forming a silicon containing layer on a substrate by a flowable CVD process, wherein the silicon containing layer having a formula of Si_xN_yH_z;

curing the silicon containing layer disposed on the substrate;

immersing the silicon containing layer into a processing solution having an oxygen source, wherein the oxygen source in the processing solution at least partially replaces silicon nitrogen or silicon hydrogen bonds in the silicon containing layer with silicon oxygen bonds; and

forming an oxidized silicon containing layer on the substrate.

15. The method of claim 14, wherein forming the silicon containing layer on the substrate by the flowable CVD process further comprising:

forming the silicon-containing layer in the presence of a gas mixture including at least a silicon containing precursor and a processing precursor, wherein the silicon containing precursor is trisilylamine (TSA) and the processing precursor is NH₃.

16. The method of claim 14, wherein the processing solution includes an oxygen source disposed in deionized (DI) water.

17. The method of claim 16, wherein the oxygen source is O₃.

18. The method of claim 14 further comprising:

performing a thermal anneal process on the oxidized silicon containing layer to anneal the substrate to a temperature between about 100 degrees Celsius and about 1000 degrees Celsius.

19. A method of forming an oxidized dielectric material on a substrate, comprising:

forming a silicon containing layer on a substrate by a flowable CVD process, wherein the silicon containing layer is formed by exposure to a gas mixture containing trisilylamine (TSA) and NH₃;

curing the silicon containing layer disposed on the substrate;

wetting the silicon containing layer with a processing solution having O₃ disposed in deionized (DI) water, wherein the ozone disposed in the deionized (DI) water has a concentration between about 1 milligram (mg) per liter (L) and about 1 milligram (mg) per liter (L); and

forming an oxidized silicon containing layer on the substrate.

20. The method of claim 19, wherein the oxygen source provided from O₃ in the processing solution at least partially coverts silicon nitrogen or silicon hydrogen bonding formed in the silicon containing layer into silicon oxygen bonding.

21. The method of claim 19, further comprising:

performing a thermal anneal process on the oxidized silicon containing layer to anneal the substrate to a temperature between about 100 degrees Celsius and about 1000 degrees Celsius.