NOVEL GAP FILL INTEGRATION
First Claim
1. A method of filling an unfilled gap on a semiconductor substrate, the method comprising:
- depositing a flowable dielectric film in the gap to partially fill the gap;
after partially filling the gap with the flowable dielectric film, depositing a high density plasma chemical vapor deposition (HDP-CVD) dielectric film via a high density plasma chemical vapor deposition reaction in the gap to complete fill of the gap, wherein the flowable dielectric film is uncured prior to the subsequent HDP-CVD deposition.
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Abstract
Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments, the top surface of the filled gap is an HDP oxide film. The resulting filled gap may be filled only with HDP oxide film or a combination of HDP oxide and flowable oxide films. The methods provide improved top hat reduction and avoid clipping of the structures defining the gaps.
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Citations
24 Claims
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1. A method of filling an unfilled gap on a semiconductor substrate, the method comprising:
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depositing a flowable dielectric film in the gap to partially fill the gap; after partially filling the gap with the flowable dielectric film, depositing a high density plasma chemical vapor deposition (HDP-CVD) dielectric film via a high density plasma chemical vapor deposition reaction in the gap to complete fill of the gap, wherein the flowable dielectric film is uncured prior to the subsequent HDP-CVD deposition. - View Dependent Claims (2, 3, 4, 5, 6, 13)
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7. A method of filling an unfilled gap on a semiconductor substrate, the method comprising:
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providing the substrate to a deposition module; depositing a flowable dielectric film in the gap to partially fill the gap; oxidizing the flowable dielectric film in the gap; transferring the substrate from the deposition module to an high density plasma chemical vapor deposition (HDP-CVD) module; and depositing a HDP dielectric film to complete fill of the gap. - View Dependent Claims (8, 9, 10, 11, 12)
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14. A method of filling an unfilled gap on a semiconductor substrate, the method comprising:
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depositing a flowable dielectric film in the gap to partially fill the gap; partially densifying the flowable dielectric film in the gap; and depositing a HDP dielectric film to complete fill of the gap. - View Dependent Claims (15, 16, 17)
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18. A method of filling an unfilled gap on a substrate, the method comprising:
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introducing a process gas comprising a silicon-containing precursor, an oxidant and an optional solvent to thereby deposit a flowable film in the gap to partially fill the gap, wherein the process gas is characterized by the following partial pressure (Pp);
vapor pressure (Pvp) ratios;silicon-containing precursor;
0.01-1;oxidant;
0.25-2; andsolvent;
0.1-1;after partially filling the gap with the flowable oxide film, depositing a HDP dielectric film to complete fill of the gap. - View Dependent Claims (19, 20, 21, 22, 23)
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24. An apparatus comprising:
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a flowable oxide deposition chamber configured to deposit flowable oxide film; a high density plasma chemical vapor deposition (HDP-CVD) deposition chamber configured to deposit HDP oxide film; and a controller, said controller comprising instructions for introducing into the flowable oxide deposition chamber a process gas including a silicon-containing precursor, an oxidant and an optional solvent, wherein the process gas is characterized by the following partial pressure (Pp);
vapor pressure (Pvp) ratios;
silicon-containing precursor;
0.01-1, oxidant;
0.25-2; and
solvent;
0.1-1.
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Specification