FILM FORMATION METHOD FOR FORMING SILICON-CONTAINING INSULATING FILM

• US 20110151679A1
• Filed: 03/04/2011
• Published: 06/23/2011
• Est. Priority Date: 02/01/2008
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ogawa, Jun, Nakajima, Shigeru, HASEBE, Kazuhide
• Granted Patent: US 8,357,619 B2
• Time in Patent Office: Days
• US Class Current: 438/788
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/31612 on a silicon body

Abstract

A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.

Claims

1-20. -20. (canceled)

21. A film formation method for a semiconductor process for forming a silicon-containing insulating film by CVD on a target substrate, the method comprising:

supplying diisopropylaminosilane (DIPAS) gas as a silicon source gas onto the target substrate; and

supplying a reactive gas onto the target substrate, the reactive gas being an oxidizing gas containing oxygen or a nitriding gas containing nitrogen,

wherein the target substrate is subjected to a process temperature set at room temperature through the film formation method, and said supplying a reactive gas is performed by supplying the reactive gas onto the target substrate while exciting the reactive gas by turning the reactive gas into plasma in an exciting mechanism, thereby generating radicals from the reactive gas and using the radicals to oxidize or nitride substances derived from the DIPAS gas, so as to form the silicon-containing insulating film.

22. The method according to claim 21, wherein the target substrate is subjected to a process pressure set at a pressure of 0.133 Pa to 13.3 kPa in each of said supplying DIPAS gas and said supplying a reactive gas.

23. The method according to claim 21, wherein the exciting mechanism includes a plasma generation section attached to a reaction chamber that accommodates the target substrate, and the reactive gas is supplied through the plasma generation section onto the target substrate.

24. The method according to claim 21, wherein said supplying DIPAS gas and said supplying a reactive gas are alternately repeated a plurality of times.

25. The method according to claim 21, wherein said supplying DIPAS gas and said supplying a reactive gas are alternately repeated a plurality of times with purging interposed therebetween of exhausting and removing residual gases on the target substrate without supplying either of the DIPAS gas and the reactive gas onto the target substrate.

26. The method according to claim 21, wherein the reactive gas is the oxidizing gas, which is selected from the group consisting of oxygen gas, ozone gas, and water vapor gas.

27. The method according to claim 21, wherein the reactive gas is the nitriding gas, which is ammonia gas.

28. A film formation method for a semiconductor process for forming a silicon oxide film by CVD on a target substrate, the method comprising:

supplying diisopropylaminosilane (DIPAS) gas as a silicon source gas onto the target substrate; and

supplying an oxidizing gas onto the target substrate, the oxidizing gas being selected from the group consisting of oxygen gas, ozone gas, and water vapor gas,

wherein the target substrate is subjected to a process temperature set at room temperature through the film formation method, and said supplying an oxidizing gas is performed by supplying the oxidizing gas onto the target substrate while exciting the oxidizing gas by turning the oxidizing gas into plasma in an exciting mechanism, thereby generating radicals from the oxidizing gas and using the radicals to oxidize substances derived from the DIPAS gas, so as to form the silicon oxide film.

29. The method according to claim 28, wherein the target substrate is subjected to a process pressure set at a pressure of 0.133 Pa to 13.3 kPa in each of said supplying DIPAS gas and said supplying an oxidizing gas.

30. The method according to claim 28, wherein the exciting mechanism includes a plasma generation section attached to a reaction chamber that accommodates the target substrate, and the oxidizing gas is supplied through the plasma generation section onto the target substrate.

31. The method according to claim 28, wherein said supplying DIPAS gas and said supplying an oxidizing gas are alternately repeated a plurality of times.

32. The method according to claim 28, wherein said supplying DIPAS gas and said supplying an oxidizing gas are alternately repeated a plurality of times with purging interposed therebetween of exhausting and removing residual gases on the target substrate without supplying either of the DIPAS gas and the oxidizing gas onto the target substrate.

33. The method according to claim 28, wherein the oxidizing gas is oxygen gas.