LIGHT SOURCE HAVING LIGHT BLOCKING COMPONENTS

• US 20110156002A1
• Filed: 07/28/2009
• Published: 06/30/2011
• Est. Priority Date: 09/04/2008
• Status: Abandoned Application

• Current Assignee: 3M Innovative Properties Company (3M Company)
• Original Assignee: 3M Innovative Properties Company (3M Company)
• Inventors: Haase, Michael A., Leatherdale, Catherine A., Ballen, Todd A., Miller, Thomas J.
• Application Number:
  US13/060,850
• Publication Number:
  US 20110156002A1
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.

Claims

1. A light emitting system comprising:

an electroluminescent device emitting light at a first wavelength from a top surface of the electroluminescent device;

a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side; and

a re-emitting semiconductor construction comprising a II-VI potential well and receiving the first wavelength light exiting the electroluminescent device and converting at least a portion of the received light to light of a second wavelength, wherein an integrated emission intensity of all light at the second wavelength exiting the light emitting system is at least 4 times an integrated emission intensity of all light at the first wavelength exiting the light emitting system.

2. The light emitting system of claim 1, wherein the electroluminescent device comprises and LED.

3. The light emitting system of claim 1, wherein the II-VI potential well comprises Cd(Mg)ZnSe or ZnSeTe.

4. The light emitting system of claim 1, wherein the construction proximate a side of the electroluminescent device for blocking light at the first wavelength blocks the light primarily by absorbing the light.

5. The light emitting system of claim 4, wherein the construction comprises a photoresist.

6. The light emitting system of claim 1, wherein the construction proximate a side of the electroluminescent device for blocking light at the first wavelength blocks the light primarily by reflecting the light.

7. The light emitting system of claim 1, wherein the construction proximate a side of the electroluminescent device blocks light at the first wavelength, but not other wavelengths, in the visible range of the electromagnetic spectrum.

8. The light emitting system of claim 1, wherein the construction is electrically insulative and directly contacts at least one electrode of the electroluminescent device.

9. The light emitting system of claim 1, wherein the construction further blocks light at the first or second wavelength that would otherwise exit a side of the re-emitting semiconductor construction.

10. The light emitting system of claim 1, wherein a substantial portion of the first wavelength light that exits the electroluminescent device and is received by the re-emitting semiconductor construction, exits the electroluminescent device through the top surface of the electroluminescent device.

11. The light emitting system of claim 1 further comprising an intermediate region between the construction and the side proximate the construction.