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Transistor

  • US 20110156020A1
  • Filed: 06/11/2010
  • Published: 06/30/2011
  • Est. Priority Date: 12/24/2009
  • Status: Abandoned Application
First Claim
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1. A transistor comprising:

  • a channel layer including an oxide semiconductor;

    a gate electrode corresponding to the channel layer;

    a source electrode and a drain electrode contacting portions of the channel layer; and

    a semiconductor insertion layer between the channel layer and the source electrode,wherein a potential barrier between the channel layer and the source electrode is increased by the semiconductor insertion layer.

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