SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a metal wiring;
an oxide semiconductor layer provided over and in contact with the metal wiring;
a first insulating film provided over the oxide semiconductor layer;
a floating gate provided over the first insulating film;
a second insulating film provided over the floating gate; and
a control gate provided over the second insulating film.
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Accused Products
Abstract
In a semiconductor device using a nonvolatile memory, high speed erasing operation and low power consumption are realized. In a nonvolatile memory in which a channel formation region, a tunnel insulating film, and a floating gate are stacked in this order, the channel formation region is formed using an oxide semiconductor layer. In addition, a metal wiring for erasing is provided in a lower side of the channel formation region so as to face the floating gate. With the above structure, when erasing operation is performed, charge accumulated in the floating gate is extracted to the metal wiring through the channel formation region. Consequently, high speed erasing operation and low power consumption of the semiconductor device can be realized.
113 Citations
32 Claims
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1. A semiconductor device comprising:
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a metal wiring; an oxide semiconductor layer provided over and in contact with the metal wiring; a first insulating film provided over the oxide semiconductor layer; a floating gate provided over the first insulating film; a second insulating film provided over the floating gate; and a control gate provided over the second insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a control gate; a first insulating film provided over the control gate; a floating gate provided over the first insulating film; a second insulating film provided over the floating gate; an oxide semiconductor layer provided over the second insulating film; and a metal wiring provided over and in contact with the oxide semiconductor layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for manufacturing a semiconductor device comprising the steps of:
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forming a metal wiring; forming an oxide semiconductor layer over the metal wiring; forming a first insulating film over the oxide semiconductor layer; forming a floating gate over the first insulating film; forming a second insulating film over the floating gate; and forming a control gate over the second insulating film. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A method for manufacturing a semiconductor device comprising the steps of:
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forming a control gate; forming a first insulating film over the control gate; forming a floating gate over the first insulating film; forming a second insulating film over the floating gate; forming an oxide semiconductor layer over the second insulating film; and forming a metal wiring over the oxide semiconductor layer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
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Specification