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SEMICONDUCTOR DEVICE

  • US 20110156027A1
  • Filed: 12/22/2010
  • Published: 06/30/2011
  • Est. Priority Date: 12/25/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor comprising;

    a first channel formation region comprising a semiconductor material other than an oxide semiconductor;

    a pair of impurity regions provided so as to sandwich the first channel formation region;

    a first gate insulating layer over the first channel formation region;

    a first gate electrode over the first gate insulating layer; and

    a first source electrode electrically connected to one of the pair of impurity regions and a first drain electrode electrically connected to the other one of the pair of impurity regions;

    a second transistor comprising;

    a second source electrode and a second drain electrode over the first transistor;

    a second channel formation region comprising an oxide semiconductor material, and electrically connected to the second source electrode and the second drain electrode;

    a second gate insulating layer over the second channel formation region; and

    a second gate electrode over the second gate insulating layer; and

    a capacitor,wherein one of the second source electrode and the second drain electrode of the second transistor and one electrode of the capacitor are electrically connected to each other.

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