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SEMICONDUCTOR DEVICE

  • US 20110156117A1
  • Filed: 12/22/2010
  • Published: 06/30/2011
  • Est. Priority Date: 12/25/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a transistor comprising;

    a source electrode and a drain electrode;

    an oxide semiconductor layer overlapping with the source electrode and the drain electrode; and

    a gate insulating layer overlapping with the oxide semiconductor layer, anda capacitor,wherein one of the source electrode and the drain electrode of the transistor and one electrode of the capacitor are electrically connected to each other.

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