INTEGRATED TRENCH GUARDED SCHOTTKY DIODE COMPATIBLE WITH POWERDIE, STRUCTURE AND METHOD
First Claim
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1. A semiconductor device circuit stage, comprising:
- a semiconductor die, comprising;
a circuit side;
a non-circuit side opposite the circuit side;
a circuit stage, comprising;
a high-side transistor comprising a lateral field effect transistor (FET) and a source region for the lateral field effect transistor;
a low-side transistor comprising a trench FET, a drain region for the trench FET which is electrically coupled with the source region of the lateral FET, and a source region for the trench FET;
a trench guarded Schottky diode integrated into the semiconductor die, wherein an anode of the trench guarded Schottky diode is electrically coupled with the source region of the trench FET and a cathode of the trench guarded Schottky diode is electrically coupled with the drain region of the trench FET and the source region of the lateral FET; and
an output provided on the non-circuit side of the semiconductor die,wherein the trench guarded Schottky diode is integrated into a cell of the trench FET.
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Abstract
A method and structure for a voltage converter including a trench field effect transistor (FET) and a trench guarded Schottky diode which is integrated with the trench FET. In an embodiment, a voltage converter can include a lateral FET, a trench FET, and a trench guarded Schottky diode integrated with the trench FET. A method to form a voltage converter can include the formation of a trench FET gate, a trench guarded Schottky diode gate, and a lateral FET gate using a single conductive layer such as a polysilicon layer.
36 Citations
23 Claims
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1. A semiconductor device circuit stage, comprising:
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a semiconductor die, comprising; a circuit side; a non-circuit side opposite the circuit side; a circuit stage, comprising; a high-side transistor comprising a lateral field effect transistor (FET) and a source region for the lateral field effect transistor; a low-side transistor comprising a trench FET, a drain region for the trench FET which is electrically coupled with the source region of the lateral FET, and a source region for the trench FET; a trench guarded Schottky diode integrated into the semiconductor die, wherein an anode of the trench guarded Schottky diode is electrically coupled with the source region of the trench FET and a cathode of the trench guarded Schottky diode is electrically coupled with the drain region of the trench FET and the source region of the lateral FET; and an output provided on the non-circuit side of the semiconductor die, wherein the trench guarded Schottky diode is integrated into a cell of the trench FET. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of integrating a Schottky diode in a trench field effect transistor (FET), comprising:
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etching at least one opening through a field oxidation layer and into a semiconductor substrate to form at least one Schottky diode trench gate opening; etching at least one opening into the semiconductor substrate to form at least one trench FET gate opening; growing a gate oxide layer in the at least one Schottky diode trench gate opening and the at least one trench FET gate opening; depositing polysilicon within the at least one Schottky diode trench gate opening and the at least one trench FET gate opening to fill at least a portion of the at least one Schottky diode trench gate opening and at least a portion of the at least one trench FET gate opening; and etching the field oxide layer and at least a portion of the polysilicon within the Schottky diode trench gate opening. - View Dependent Claims (9, 10, 11, 12)
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13. A method used during the formation of a semiconductor device, comprising:
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forming an epitaxial layer over a semiconductor substrate; forming a patterned oxidation-resistant layer over the epitaxial layer; forming a patterned buried layer mask over the patterned oxidation-resistant layer; with the patterned buried layer mask and the patterned oxidation-resistant layer in place, performing a first dopant implant to implant a first dopant having a first conductivity type into the epitaxial layer, wherein the first dopant implant is blocked by both the patterned buried layer mask and the patterned oxidation-resistant layer; with the patterned buried layer mask and the patterned oxidation-resistant layer in place, performing a second dopant implant to implant a second dopant having a second conductivity type different from the first conductive type into the epitaxial layer, wherein the second dopant implant is blocked by the patterned buried layer mask and passes through the patterned oxidation-resistant layer; removing the patterned buried layer mask; with the oxidation-resistant layer in place, oxidizing the epitaxial layer to form a field oxide layer; and subsequent to oxidizing the epitaxial layer, removing the oxidation-resistant layer. - View Dependent Claims (14, 15, 16)
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17. An electronic system, comprising:
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a power supply; a first voltage converter electrically coupled to the power supply with a first power bus and a second voltage converter electrically coupled to the power supply with the first power bus, wherein at least one of the first voltage converter and the second voltage converter comprises; a first semiconductor die comprising; a high-side transistor comprising a lateral field effect transistor (FET) and a source region for the lateral field effect transistor; a low-side transistor comprising a trench FET, a drain region for the trench FET which is electrically coupled with the source region of the lateral FET, and a source region for the trench FET; a trench guarded Schottky diode integrated into the semiconductor die, wherein an anode of the trench guarded Schottky diode is electrically coupled with the source region of the trench FET and a cathode of the trench guarded Schottky diode is electrically coupled with the drain region of the trench FET and the source region of the lateral FET; and an output provided on the non-circuit side of the semiconductor die, wherein the trench guarded Schottky diode is integrated into a cell of the trench FET; a second semiconductor die comprising a controller/voltage regulator adapted to control the first semiconductor die; and a first data bus adapted to pass data between the first semiconductor die and the second semiconductor die; at least one digital circuit die electrically coupled to the first voltage converter with a second power bus; at least one memory device electrically coupled to the second voltage converter with a third power bus; and a second data bus adapted to pass data between the processor and the at least one memory device. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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Specification