POWER SEMICONDUCTOR MODULE AND SEMICONDUCTOR POWER CONVERTER PROVIDED WITH THE SAME

• US 20110156797A1
• Filed: 12/28/2009
• Published: 06/30/2011
• Est. Priority Date: 12/28/2009
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Ueda, Kazuhiro, Shimizu, Yoshiyuki, Obu, Toshiharu, NINOMIYA, Gou, Baba, Shinichi
• Granted Patent: US 8,493,762 B2
• Time in Patent Office: Days
• US Class Current: 327/482
• CPC Class Codes: H01L 25/112 Mixed assemblies
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A power semiconductor module includes semiconductor elements of a first system constituting each of arms in a circuit of the first system, semiconductor elements of a second system constituting each of arms in a circuit of the second system, a plurality of DC electrode conductors including a common DC electrode conductor joined to the semiconductor elements of the first and second systems, and a plurality of AC electrode conductors joined to the respective semiconductor elements of the first and second systems. Each of the semiconductor elements of the first and second systems is interposed between the DC electrode conductor and AC electrode conductor.

Claims

1. A power semiconductor module comprising:

semiconductor elements of a first system constituting each of arms in a circuit of the first system;

semiconductor elements of a second system constituting each of arms in a circuit of the second system;

a plurality of DC electrode conductors including a common DC electrode conductor joined to the semiconductor elements of the first and second systems; and

a plurality of AC electrode conductors joined to the respective semiconductor elements of the first and second systems,

each of the semiconductor elements of the first and second systems being interposed between the DC electrode conductor and AC electrode conductor.

2. The power semiconductor module according to claim 1, wherein each of the semiconductor elements includes a switching element and a diode,

the switching elements and diodes are arranged on the DC electrode conductors and AC electrode conductors alternately in a line in one direction, and

the switching elements positioned on both sides of the DC electrode conductor or AC electrode conductor interposed between the switching elements are arranged at positions shifted from each other in the one direction.

11. A semiconductor power converter comprising:

a power semiconductor module according to claim 1;

a drive circuit configured to drive the power semiconductor module; and

a control circuit configured to control the power semiconductor module.

3. A power semiconductor module comprising:

a first semiconductor element constituting an upper arm of one phase in a circuit of a first system;

a second semiconductor element constituting a lower arm of the one phase in the circuit of the first system;

a third semiconductor element constituting an upper arm of one phase in a circuit of a second system;

a fourth semiconductor element constituting a lower arm of the one phase in the circuit of the second system;

a first conductor joined to a positive electrode side of the first semiconductor element, and positive electrode side of the third semiconductor element;

a second conductor joined to a negative electrode side of the second semiconductor element, and negative electrode side of the fourth semiconductor elements;

a third conductor arranged between the first conductor and the second conductor, and joined to a negative electrode side of the first semiconductor element, and positive electrode side of the second semiconductor element; and

a fourth conductor arranged between the first conductor and second conductor, and joined to a negative electrode side of the third semiconductor elements, and positive electrode side of the fourth semiconductor element.

4. The power semiconductor module according to claim 3, wherein the third conductor includes one end part opposed to the fourth conductor with a gap, and the fourth conductor includes one end part opposed to the one end part of the third conductor, the other end part opposite to the one end part of the fourth conductor, and a notch extending from the one end part to the other end part, and

which further comprises:

a positive electrode output terminal extended from the first conductor;

a negative electrode output terminal extended from the second conductor;

a first AC output terminal configured to extend from the one end part of the third conductor and beyond the other end part of the fourth conductor through the notch of the fourth conductor; and

a second AC output terminal configured to extend from the other end part of the fourth conductor.

5. The power semiconductor module according to claim 3, wherein the first, second, third, and fourth conductors are each formed into an elongate shape with both end parts in an axial direction, and are arranged in parallel with one another, and

the third and fourth conductors are arranged between the first and second conductors in parallel with each other with a gap between the first and second conductors,

which further comprises:

a positive electrode output terminal extended from one end part of the first conductor;

a negative electrode output terminal extended from one end part of the second conductor in the same direction as the positive electrode output terminal;

a first AC output terminal extended from one end part of the third conductor opposed to the fourth conductor in a direction opposite to the positive electrode output terminal; and

a second AC output terminal extended from an other end part of the fourth conductor in a direction opposite to the positive electrode output terminal.

6. The power semiconductor module according to claim 3, wherein the third conductor includes one end part opposed to the fourth conductor with a gap, and the fourth conductor includes one end part opposed to the one end part of the third conductor, and the other end part opposite to the one end part of the fourth conductor, and

which further comprises:

a positive electrode output terminal extended from the first conductor;

a negative electrode output terminal extended from the second conductor; and

a first AC output terminal configured to extend from the one end part of the third conductor beyond the other end part of the fourth conductor and electrically connected to the fourth conductor.

7. The power semiconductor module according to claim 3, further comprising a radiator member including a joint surface joined to the first conductor, second conductor, third conductor, and fourth conductor.

8. The power semiconductor module according to claim 7, wherein a joint surface between the first and second semiconductor elements and the first conductor, a joint surface between the second and fourth semiconductor elements and the second conductor, a joint surface between the first and second semiconductor elements and the third conductor, and a joint surface between the third and fourth semiconductor elements and the fourth conductor each extends to intersect the joint surface of the radiator member.

9. The power semiconductor module according to claim 3, wherein each of the first, second, third, and fourth semiconductor elements includes a switching element and a diode,

the switching elements and diodes are arranged alternately in a line on the first, second, third, and fourth conductors in one direction, and

the switching elements located on both sides the third conductor or fourth conductor are arranged at positions shifted from each other in the one direction.

10. The power semiconductor module according to claim 3, wherein each of the first, second, third, and fourth semiconductor elements includes a switching element and a diodes,

further comprising an emitter sense terminal configured to be connected to the switching element and provided at a position other than the position of the switching element.

12. A power semiconductor module comprising:

a semiconductor element including a switching element, and constituting one arm;

a positive electrode conductor joined to a positive electrode side of the semiconductor element;

an electrode conductor joined to a negative electrode side of the semiconductor element;

input/output terminals provided for the switching element; and

an emitter sense terminal provided at a position other than the position of the switching element, and configured to drive the switching element.

13. The power semiconductor module according to claim 12, further comprising an output terminal extended from the positive electrode conductor;

and an output terminal extended from the electrode conductor, wherein the emitter sense terminal is provided at the output terminal.

14. A power semiconductor module comprising:

a first semiconductor element including a first switching element, and constituting one arm;

a second semiconductor element including a second switching element, and constituting another arm;

a first conductor joined to a positive electrode side of the first semiconductor element;

a second conductor joined to a negative electrode side of the second semiconductor element;

a third conductor arranged between the first conductor and the second conductor, and joined to a negative electrode side of the first semiconductor element and a positive electrode side of the second semiconductor element;

a plurality of input/output terminals provided for the first switching element and second switching element; and

emitter sense terminals provided at positions other than the positions of the first and second switching elements, and configured to drive the first and second switching elements.

15. The power semiconductor module according to claim 14, further comprising:

a first output terminal extended from the first conductor;

a second output terminal extended from the second conductor; and

a third output terminal extended from the third conductor,

wherein the emitter sense terminals are provided at the first, second, and third output terminals.

16. The power semiconductor module according to claim 14, wherein the first conductor, second conductor, and third conductor are arranged side by side in parallel with one another,

the first switching element is interposed between the first conductor and the third conductor, and

the second semiconductor element is interposed between the second conductor and third conductor.

17. The power semiconductor module according to claim 14, further comprising a radiator member including a joint surface joined to the first conductor, second conductor, and third conductor.

18. The power semiconductor module according to claim 17, wherein a joint surface between the first conductor and the first semiconductor element, a joint surface between the second conductor and the second semiconductor element, and joint surfaces between the third conductor and the first and second semiconductor elements each extends to intersect the joint surface of the radiator member.

19. A semiconductor power converter comprising:

a power semiconductor module according to claim 14;

a drive circuit configured to drive the power semiconductor module; and

a control circuit configured to control the power semiconductor module.

20. A power semiconductor module comprising:

a first semiconductor element including a first switching element, and constituting one arm;

a second semiconductor element including a second switching element, and constituting another arm;

a first conductor joined to a positive electrode side of the first semiconductor element;

a second conductor joined to a negative electrode side of the second semiconductor element; and

a third conductor arranged between the first conductor and second conductor, and joined to a negative electrode side of the first semiconductor element and a positive electrode side of the second semiconductor element,

the first switching element and the second switching element being arranged at positions asymmetrical with respect to a central axis of the third conductor.

21. The power semiconductor module according to claim 20, wherein the first conductor, second conductor, and third conductor are arranged side by side in parallel with one another,

the first semiconductor element includes the first switching element and a diode which are interposed between the first conductor and the third conductor, and are arranged in a line along the central axis,

the second semiconductor element include the second switching element and diode which are interposed between the second conductor and the third conductor, and are arranged in a line along the central axis, and

the first switching element and second switching element are arranged at positions shifted from each other in the direction of the central axis.

22. The power semiconductor module according to claim 21, wherein the first switching element is opposed to the diode included in the second semiconductor element with the third conductor interposed between the first switching element and the diode, and

the second switching element is opposed to the diode included in the first semiconductor element with the third conductor interposed between the second switching element and the diode.

23. The power semiconductor module according to claim 20, further comprising a radiator member including a joint surface joined to the first conductor, second conductor, and third conductor.

24. The power semiconductor module according to claim 23, wherein a joint surface between the first conductor and the first semiconductor element, a joint surface between the second conductor and the second semiconductor element, and a joint surface between the third conductor and the first and second semiconductor elements each extends to intersect the joint surface of the radiator member.

25. A semiconductor power converter comprising:

a power semiconductor module according to claim 20;

a drive circuit configured to drive the power semiconductor module; and

a control circuit configured to control the power semiconductor module.