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Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD

  • US 20110159202A1
  • Filed: 11/24/2010
  • Published: 06/30/2011
  • Est. Priority Date: 12/29/2009
  • Status: Abandoned Application
First Claim
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1. A method for sealing pores at a surface of a dielectric layer formed on a substrate, comprising:

  • providing a substrate on which a dielectric layer having a porous surface is formed as an outermost layer;

    placing the substrate in an evacuatable chamber;

    irradiating the substrate with UV light in an atmosphere of hydrocarbon and/or oxy-hydrocarbon gas to seal pores at the porous surface of the dielectric layer; and

    continuously irradiating the substrate with UV light in the atmosphere of hydrocarbon and/or oxy-hydrocarbon gas to form a protective film or layer having a desired thickness on the dielectric layer.

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