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LED UNITS FABRICATION METHOD

  • US 20110159615A1
  • Filed: 05/11/2010
  • Published: 06/30/2011
  • Est. Priority Date: 12/28/2009
  • Status: Active Grant
First Claim
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1. A method for fabricating a plurality of individual light emitting diode units, comprising:

  • providing a sapphire substrate;

    forming a GaN epitaxial layer on the sapphire substrate;

    forming a plurality of exhaust trenches on the GaN epitaxial layer, wherein the exhaust trenches define a plurality of individual light emitting diode units;

    forming a reflective layer on the GaN epitaxial layer;

    attaching the reflective layer to a conductive substrate;

    removing the sapphire substrate from the GaN epitaxial layer via a laser lift-off process, wherein a gas produced during the laser lift-off process is exhausted via the exhaust trenches; and

    dicing the conductive substrate along the exhaust trenches to form the plurality of individual light emitting diode units.

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