METHOD FOR FABRICATING A SENSOR
First Claim
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1. A method for fabricating a sensor comprising the steps of:
- forming a substrate recess in a semiconductor substrate wafer;
forming a device recess in a semiconductor device wafer, wherein said device wafer comprises a first device layer, a second device layer, a first oxide layer, and a second oxide layer, wherein said first oxide layer is located under said first device layer, said second device layer is located under said first oxide layer, and said second oxide layer is located under said second device layer, and wherein said device recess extends through said first device layer to expose said first oxide layer;
securing said first device layer to said substrate wafer, wherein said device recess is aligned over said substrate recess; and
implanting at least one piezoresistive sensor element in said second device layer to sense flexure in said second device layer.
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Abstract
A method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a double silicon on insulator wafer to create a suspended structure, the flexure of which is sensed by an embedded piezoresistive sensor element. In one embodiment the sensor measures acceleration. In other embodiments the sensor measures pressure.
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Citations
20 Claims
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1. A method for fabricating a sensor comprising the steps of:
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forming a substrate recess in a semiconductor substrate wafer; forming a device recess in a semiconductor device wafer, wherein said device wafer comprises a first device layer, a second device layer, a first oxide layer, and a second oxide layer, wherein said first oxide layer is located under said first device layer, said second device layer is located under said first oxide layer, and said second oxide layer is located under said second device layer, and wherein said device recess extends through said first device layer to expose said first oxide layer; securing said first device layer to said substrate wafer, wherein said device recess is aligned over said substrate recess; and implanting at least one piezoresistive sensor element in said second device layer to sense flexure in said second device layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification