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METHOD FOR FABRICATING A SENSOR

  • US 20110159627A1
  • Filed: 12/28/2009
  • Published: 06/30/2011
  • Est. Priority Date: 12/28/2009
  • Status: Active Grant
First Claim
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1. A method for fabricating a sensor comprising the steps of:

  • forming a substrate recess in a semiconductor substrate wafer;

    forming a device recess in a semiconductor device wafer, wherein said device wafer comprises a first device layer, a second device layer, a first oxide layer, and a second oxide layer, wherein said first oxide layer is located under said first device layer, said second device layer is located under said first oxide layer, and said second oxide layer is located under said second device layer, and wherein said device recess extends through said first device layer to expose said first oxide layer;

    securing said first device layer to said substrate wafer, wherein said device recess is aligned over said substrate recess; and

    implanting at least one piezoresistive sensor element in said second device layer to sense flexure in said second device layer.

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