METHOD OF FABRICATING BACKSIDE ILLUMINATED IMAGE SENSOR

• US 20110159631A1
• Filed: 03/09/2011
• Published: 06/30/2011
• Est. Priority Date: 03/06/2006
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Shiau, Gwo-Yuh, Shiu, Feng-Jia, Yao, Liang-Lung, Fu, Shih-Chu, Hsieh, Yuan-Chih
• Granted Patent: US 8,357,561 B2
• Time in Patent Office: Days
• US Class Current: 438/70
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate having a front surface and a back surface; forming an alignment mark at the front surface of the substrate, wherein the alignment mark is detectable for alignment from the back surface; and processing the substrate from the back surface by performing registration from the back surface and using the alignment mark as a reference.

Claims

1. A method comprising:

providing a substrate having a front surface, a back surface, an active region, and an alignment region;

forming a detectable fine alignment mark at the front surface of the substrate in the alignment region by performing registration from the back surface using a global alignment mark at the front surface of the substrate in the alignment region; and

processing the active region of the substrate from the back surface by performing registration from the back surface using the detectable fine alignment mark as a reference.

2. The method of claim 1 wherein the forming the detectable fine alignment mark at the front surface of the substrate in the alignment region by performing registration from the back surface using the global alignment mark at the front surface of the substrate in the alignment region includes:

forming an alignment mark at the front surface of the substrate; and

forming a material layer over the alignment mark, the material layer configured to allow detection of the alignment mark from the back surface of the substrate.

3. The method of claim 2 wherein the forming the material layer over the alignment mark, the material layer configured to allow detection of the alignment mark from the back surface of the substrate, includes forming an organic layer over the alignment mark.

4. The method of claim 3 wherein the forming the organic layer over the alignment mark includes forming a photoresist layer over the alignment mark.

5. The method of claim 2 wherein the forming the material layer over the alignment mark includes optically detecting and aligning the global alignment mark with a reticle alignment mark on a reticle.

6. The method of claim 1 wherein the forming the detectable fine alignment mark at the front surface of the substrate in the alignment region includes forming one of a polysilicon structure, a metal structure, and a dielectric structure.

7. The method of claim 1 wherein the forming the detectable fine alignment mark at the front surface of the substrate in the alignment region by performing registration from the back surface using the global alignment mark at the front surface of the substrate in the alignment region includes:

selectively etching a portion of the substrate from the back surface to expose an alignment mark at the front surface of the substrate; and

forming a material layer over the exposed alignment mark, the material layer configured to allow detection of the alignment mark from the back surface of the substrate.

8. The method of claim 6 wherein the selectively etching the portion of the substrate from the back surface to expose the alignment mark at the front surface of the substrate includes:

forming a photoresist layer over the back surface of the substrate;

exposing the photoresist layer to a reticle pattern of a reticle, wherein the exposing includes optically detecting and aligning the global alignment mark with a reticle alignment mark on the reticle;

developing the exposed photoresist layer, such that the substrate in the alignment region is exposed; and

etching the exposed substrate in the alignment region to expose the alignment mark at the front surface of the substrate.

9. The method of claim 8 wherein the forming the material layer over the exposed alignment mark includes filling the alignment region with an organic material.

10. The method of claim 1 wherein the processing the active region of the substrate from the back surface by performing registration from the back surface using the detectable fine alignment mark as a reference includes:

forming a doped region in the active region of the substrate; and

forming a color filter and a mircolens over the back surface of the substrate, the color filter and microlens being aligned with the doped region.

11. A method for fabricating a backside illuminated image sensor comprising:

providing a substrate having a front surface and a back surface;

forming an alignment mark at the front surface of the substrate, wherein the alignment mark is detectable for alignment from the back surface; and

processing the substrate from the back surface by performing registration from the back surface using the alignment mark at the front surface of the substrate as a reference.

12. The method of claim 11 wherein the forming the alignment mark at the front surface of the substrate, wherein the alignment mark is detectable for alignment from the back surface, includes forming a material layer free of silicon over the alignment mark, the material layer being substantially planar with the back surface of the substrate.

13. The method of claim 12 wherein the forming the material layer free of silicon includes forming a photoresist layer.

14. The method of claim 11 wherein the forming the alignment mark at the front surface of the substrate, wherein the alignment mark is detectable for alignment from the back surface, includes:

removing a portion of the substrate from the back surface, such that the alignment mark is exposed; and

forming an organic material layer over the exposed alignment mark.

15. The method of claim 11 wherein the forming the alignment mark at the front surface of the substrate includes performing registration from the back surface of the substrate using another alignment mark at the front surface of the substrate.

16. The method of claim 11 wherein the forming the alignment mark at the front surface of the substrate includes forming a polysicilicon structure or a metal structure.

17. The method of claim 11 wherein the forming the alignment mark at the front surface of the substrate includes:

forming a trench that extends from the front surface of the substrate a depth into the substrate; and

filling the trench with an insulating material.

18. A method for fabricating a backside illuminated image sensor comprising:

providing a semiconductor substrate having a first surface and a second surface that is opposite the first surface;

forming a first alignment mark, a second alignment mark, and a metal interconnect structure at the first surface of the semiconductor substrate; and

forming an organic material layer over the second alignment mark, wherein the second alignment mark is optically visible through the organic material layer from the second surface of the semiconductor substrate.

19. The method of claim 18 further including processing the semiconductor substrate from the second surface by performing registration from the second surface using the second alignment mark as a reference.

20. The method of claim 19 wherein the processing the semiconductor substrate from the second surface by performing registration from the second surface using the second alignment mark as a reference includes:

forming a doped region in the semiconductor substrate; and

forming a color filter and a mircolens over the second surface of the substrate, the color filter and microlens being aligned with the doped region.