METHOD OF MANUFACTURING BACK SIDE ILLUMINATED IMAGING DEVICE

• US 20110159634A1
• Filed: 09/21/2010
• Published: 06/30/2011
• Est. Priority Date: 12/24/2009
• Status: Active Grant

• Current Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Oshiki, Yusuke, Miyano, Kiyotaka
• Granted Patent: US 8,377,732 B2
• Time in Patent Office: Days
• US Class Current: 438/73
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 27/14687 Wafer level processing

Abstract

In one embodiment, a method of manufacturing a back side illuminated imaging device includes forming a semiconductor detection device and a peripheral circuit device on a semiconductor substrate, and bonding the semiconductor substrate onto a holding substrate via the semiconductor detection device and the peripheral circuit device. The method further includes removing the semiconductor substrate from the holding substrate to transfer the semiconductor detection device and the peripheral circuit device onto the holding substrate. The method further includes forming an amorphous semiconductor layer in which impurities are introduced, on the semiconductor detection device transferred onto the holding substrate, and annealing the amorphous semiconductor layer by using a microwave.

Claims

1. A method of manufacturing a back side illuminated imaging device, the method comprising:

forming a semiconductor detection device and a peripheral circuit device on a semiconductor substrate;

bonding the semiconductor substrate onto a holding substrate via the semiconductor detection device and the peripheral circuit device;

removing the semiconductor substrate from the holding substrate to transfer the semiconductor detection device and the peripheral circuit device onto the holding substrate;

forming an amorphous semiconductor layer in which impurities are introduced, on the semiconductor detection device transferred onto the holding substrate; and

annealing the amorphous semiconductor layer by using a microwave.

2. The method according to claim 1, wherein the annealing is performed at a temperature in a range from 250 to 700°

C.

3. The method according to claim 1, wherein a frequency of the microwave is in a range from 2.45 to 24.125 GHz.

4. The method according to claim 3, wherein the frequency of the microwave is in a range from 3 to 8 GHz.

5. The method according to claim 1, wherein the annealing is performed during 5 to 60 minutes.

6. The method according to claim 1, wherein a thickness of the amorphous semiconductor layer is in a range from 15 to 25 nm.

7. The method according to claim 1, wherein an area concentration of the impurities is in a range from 1×

10¹⁸ to 1×

10²⁰ cm<sup>−

2</sup>.

8. The method according to claim 1, wherein a p+ type semiconductor layer is formed from the amorphous semiconductor layer by the annealing.

9. The method according to claim 8, wherein the p+ type semiconductor layer is formed on a light incident surface of the semiconductor detection device.

10. The method according to claim 9, further comprising:

fabricating a color filter and a condenser lens on the light incident surface of the semiconductor detection device via the p+ type semiconductor layer.

11. The method according to claim 1, wherein the amorphous semiconductor layer is formed by:

forming a semiconductor layer on the semiconductor detection device transferred onto the holding substrate;

amorphizing the semiconductor layer by a first ion implantation into the semiconductor layer; and

introducing the impurities into the semiconductor layer, by a second ion implantation into the semiconductor layer.

12. The method according to claim 11, wherein

the semiconductor layer is a silicon layer, and

atoms used in the first ion implantation are Ge (germanium), Sn (tin), or Sb (antimony) atoms.

13. The method according to claim 11, wherein the semiconductor layer is partially or entirely amorphized by the first ion implantation.

14. The method according to claim 1, wherein the semiconductor detection device comprises a photodiode.

15. The method according to claim 14, wherein the photodiode is formed by:

forming a p type semiconductor layer on the semiconductor substrate; and

forming an n type semiconductor layer in the p type semiconductor layer.

16. The method according to claim 1, wherein the peripheral circuit device comprises a field effect transistor.

17. The method according to claim 1, wherein

the semiconductor substrate is divided along a plane which is parallel to a substrate surface of the semiconductor substrate, before the semiconductor substrate is bonded onto the holding substrate.

18. The method according to claim 1, wherein

the semiconductor substrate is removed from the holding substrate so that the semiconductor substrate partially remains on the holding substrate.

19. The method according to claim 1, wherein

the semiconductor substrate is entirely removed from the holding substrate.

20. A method of manufacturing a back side illuminated imaging device, the method comprising:

forming a semiconductor detection device and a peripheral circuit device on a semiconductor substrate;

forming an amorphous semiconductor layer in which impurities are introduced, on the semiconductor detection device formed on the semiconductor substrate; and

annealing the amorphous semiconductor layer by using a microwave.