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Thin film transistors and methods of manufacturing the same

  • US 20110159646A1
  • Filed: 03/04/2011
  • Published: 06/30/2011
  • Est. Priority Date: 05/29/2007
  • Status: Active Grant
First Claim
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1. A method of manufacturing a thin-film-transistor (TFT), the method comprising:

  • forming a zinc oxide (ZnO)-based channel layer on a substrate, the ZnO-based channel layer including a plurality of ZnO-based semiconductor layers, a Zn concentration of an uppermost semiconductor layer of the plurality of ZnO-based semiconductor layers less than a Zn concentration of at least one other of the plurality of semiconductor layers;

    forming a source electrode and a drain electrode at respective sides of the channel layer; and

    forming a passive layer covering the channel layer, the source electrode, and the drain electrode.

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