METHOD OF FORMING A DIELECTRIC LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
First Claim
1. A method of forming an aluminum oxide layer, comprising:
- i) supplying an aluminum source gas and a dilution gas into a chamber through a common gas supply nozzle so that the aluminum source gas is adsorbed on a substrate in the chamber;
ii) supplying a first purge gas into the chamber to purge the physically adsorbed aluminum source gas from the substrate;
iii) supplying an oxygen source gas into the chamber to form an aluminum oxide layer on the substrate;
iv) supplying a second purge gas into the chamber to purge a reaction residue and the physically adsorbed remaining gas from the substrate; and
v) performing i) to iv) repeatedly to form an aluminum oxide layer having a desired thickness.
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Accused Products
Abstract
In a method of forming an aluminum oxide layer, an aluminum source gas and a dilution gas can be supplied into a chamber through a common gas supply nozzle so that the aluminum source gas may be adsorbed on a substrate in the chamber. A first purge gas can be supplied into the chamber to purge the physically adsorbed aluminum source gas from the substrate. An oxygen source gas may be supplied into the chamber to form an aluminum oxide layer on the substrate. A second purge gas may be supplied into the chamber to purge a reaction residue and the physically adsorbed remaining gas from the substrate. The operations can be performed repeatedly to form an aluminum oxide layer having a desired thickness.
343 Citations
20 Claims
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1. A method of forming an aluminum oxide layer, comprising:
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i) supplying an aluminum source gas and a dilution gas into a chamber through a common gas supply nozzle so that the aluminum source gas is adsorbed on a substrate in the chamber; ii) supplying a first purge gas into the chamber to purge the physically adsorbed aluminum source gas from the substrate; iii) supplying an oxygen source gas into the chamber to form an aluminum oxide layer on the substrate; iv) supplying a second purge gas into the chamber to purge a reaction residue and the physically adsorbed remaining gas from the substrate; and v) performing i) to iv) repeatedly to form an aluminum oxide layer having a desired thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of manufacturing a flash memory device, comprising:
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forming a tunnel oxide layer and a charge trapping layer pattern on a substrate; loading the substrate including the charge trapping layer into a chamber; supplying an aluminum source gas and a dilution gas into the chamber through a common gas supply nozzle so that the aluminum source gas is adsorbed on the substrate in the chamber; supplying a first purge gas into the chamber to purge the physically adsorbed aluminum source gas from the substrate; supplying an oxygen source gas into the chamber to form an aluminum oxide layer on the substrate; supplying a second purge gas into the chamber to purge a reaction residue and the physically adsorbed remaining gas from the substrate; and forming a control gate electrode on the aluminum oxide layer. - View Dependent Claims (13, 14, 15, 16)
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17. A method of manufacturing a capacitor, comprising:
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forming a lower electrode on a substrate; loading the substrate including the lower electrode into a chamber; supplying an aluminum source gas and a dilution gas into the chamber through a common gas supply nozzle so that the aluminum source gas is adsorbed on the substrate in the chamber; supplying a first purge gas into the chamber to purge the physically adsorbed aluminum source gas from the substrate; supplying an oxygen source gas into the chamber to form an aluminum oxide layer on the substrate; supplying a second purge gas into the chamber to purge a reaction residue and the physically adsorbed remaining gas from the substrate; and forming an upper electrode on the aluminum oxide layer. - View Dependent Claims (18, 19, 20)
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Specification