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METHOD OF FORMING A DIELECTRIC LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

  • US 20110159680A1
  • Filed: 12/21/2010
  • Published: 06/30/2011
  • Est. Priority Date: 12/31/2009
  • Status: Abandoned Application
First Claim
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1. A method of forming an aluminum oxide layer, comprising:

  • i) supplying an aluminum source gas and a dilution gas into a chamber through a common gas supply nozzle so that the aluminum source gas is adsorbed on a substrate in the chamber;

    ii) supplying a first purge gas into the chamber to purge the physically adsorbed aluminum source gas from the substrate;

    iii) supplying an oxygen source gas into the chamber to form an aluminum oxide layer on the substrate;

    iv) supplying a second purge gas into the chamber to purge a reaction residue and the physically adsorbed remaining gas from the substrate; and

    v) performing i) to iv) repeatedly to form an aluminum oxide layer having a desired thickness.

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