ADVANCED HIGH EFFICIENTCY CRYSTALLINE SOLAR CELL FABRICATION METHOD
First Claim
1. A solar cell comprising:
- a semiconducting wafer having a front surface, a back surface, and a background doped region between the front surface and the back surface;
a front alternatingly-doped region extending from the front surface of the semiconducting wafer to a location between the front surface and the back surface, wherein the front doped region comprises laterally alternating first front doped regions and second front doped regions, the second front doped regions having a lower sheet resistance than the first front doped regions, and wherein a p-n junction is formed between the first front doped regions and the background doped region;
a plurality of front metal contacts aligned over the second front doped regions, wherein the front metal contacts are configured to conduct electrical charge from the second front doped regions;
a back alternatingly-doped region extending from the back surface of the semiconducting wafer to a location between the back surface and the front surface, wherein the back doped region comprises laterally alternating first back doped regions and second back doped regions, the second back doped regions having a lower sheet resistance than the first back doped regions; and
a back metal contact layer disposed on the back surface of the semiconducting wafer, wherein the back metal contact layer covers the first back doped regions and the second back doped regions and is configured to conduct electrical charge from the second back doped regions.
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Accused Products
Abstract
A method of fabricating a solar cell comprising: providing a semiconducting wafer having a front surface, a back surface, and a background doped region; performing a set of ion implantations of dopant into the semiconducting wafer to form a back alternatingly-doped region extending from the back surface of the semiconducting wafer to a location between the back surface and the front surface, wherein the back doped region comprises laterally alternating first back doped regions and second back doped regions, and wherein the first back doped regions comprise a different charge type than the second back doped regions and the background doped region; and disposing a back metal contact layer onto the back surface of the semiconducting wafer, wherein the back metal contact layer is aligned over the first and second back doped regions and is configured to conduct electrical charge from the first and second back doped regions.
139 Citations
62 Claims
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1. A solar cell comprising:
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a semiconducting wafer having a front surface, a back surface, and a background doped region between the front surface and the back surface; a front alternatingly-doped region extending from the front surface of the semiconducting wafer to a location between the front surface and the back surface, wherein the front doped region comprises laterally alternating first front doped regions and second front doped regions, the second front doped regions having a lower sheet resistance than the first front doped regions, and wherein a p-n junction is formed between the first front doped regions and the background doped region; a plurality of front metal contacts aligned over the second front doped regions, wherein the front metal contacts are configured to conduct electrical charge from the second front doped regions; a back alternatingly-doped region extending from the back surface of the semiconducting wafer to a location between the back surface and the front surface, wherein the back doped region comprises laterally alternating first back doped regions and second back doped regions, the second back doped regions having a lower sheet resistance than the first back doped regions; and a back metal contact layer disposed on the back surface of the semiconducting wafer, wherein the back metal contact layer covers the first back doped regions and the second back doped regions and is configured to conduct electrical charge from the second back doped regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of fabricating a solar cell, the method comprising:
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providing a semiconducting wafer having a front surface, a back surface, and a background doped region between the front surface and the back surface; performing a first set of ion implantations of dopant into the semiconducting wafer to form a front alternatingly-doped region extending from the front surface of the semiconducting wafer to a location between the front surface and the back surface, wherein the front doped region comprises laterally alternating first front doped regions and second front doped regions, the second front doped regions having a lower sheet resistance than the first front doped regions, and wherein a p-n junction is formed between the first front doped regions and the background doped region; disposing a plurality of front metal contacts on the semiconducting wafer, wherein the front metal contacts are aligned over the second front doped regions and are configured to conduct electrical charge from the second front doped regions; performing a second set of ion implantations of dopant into the semiconducting wafer to form a back alternatingly-doped region extending from the back surface of the semiconducting wafer to a location between the back surface and the front surface, wherein the back doped region comprises laterally alternating first back doped regions and second back doped regions, the second back doped regions having a lower sheet resistance than the first back doped regions; and disposing a back metal contact layer onto the back surface of the semiconducting wafer, wherein the back metal contact layer covers the first back doped regions and the second back doped regions and is configured to conduct electrical charge from the second back doped regions. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A solar cell comprising:
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a semiconducting wafer having a front surface, a back surface, and a background doped region between the front surface and the back surface; a back alternatingly-doped region extending from the back surface of the semiconducting wafer to a location between the back surface and the front surface, wherein the back doped region comprises laterally alternating first back doped regions and second back doped regions, and wherein the first back doped regions comprise a different charge type than the second back doped regions and the background doped region; and a back metal contact layer disposed on the back surface of the semiconducting wafer, wherein the back metal contact layer is aligned over the first and second back doped regions and is configured to conduct electrical charge from the first and second back doped regions. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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49. A method of fabricating a solar cell, the method comprising:
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providing a semiconducting wafer having a front surface, a back surface, and a background doped region between the front surface and the back surface; performing a set of ion implantations of dopant into the semiconducting wafer to form a back alternatingly-doped region extending from the back surface of the semiconducting wafer to a location between the back surface and the front surface, wherein the back doped region comprises laterally alternating first back doped regions and second back doped regions, and wherein the first back doped regions comprise a different charge type than the second back doped regions and the background doped region; and disposing a back metal contact layer onto the back surface of the semiconducting wafer, wherein the back metal contact layer is aligned over the first and second back doped regions and is configured to conduct electrical charge from the first and second back doped regions. - View Dependent Claims (50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62)
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Specification