CNT-BASED SENSORS: DEVICES, PROCESSES AND USES THEREOF
First Claim
Patent Images
1. An antennae assembly electrode, comprising:
- an electrically conductive layer at least partially surmounting a substrate; and
an assembly of doped antennae vertically oriented with respect to the electrically conductive layer, wherein each of the doped antennae comprises a doped MWNT comprising;
a base end attached to the electrically conductive layer,a mid-section comprising an outer surface surrounding a lumen, wherein at least a portion of the outer surface of the mid-section is capable of being in fluidic contact with an environment in contact with the antennae;
a top end disposed opposite to the base end, anda dopant attached to or contained within the lumen, a dopant attached to or contained within the outer surface, a dopant attached to or contained within the top end, or any combination thereof.
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Abstract
Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed.
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Citations
219 Claims
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1. An antennae assembly electrode, comprising:
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an electrically conductive layer at least partially surmounting a substrate; and an assembly of doped antennae vertically oriented with respect to the electrically conductive layer, wherein each of the doped antennae comprises a doped MWNT comprising; a base end attached to the electrically conductive layer, a mid-section comprising an outer surface surrounding a lumen, wherein at least a portion of the outer surface of the mid-section is capable of being in fluidic contact with an environment in contact with the antennae; a top end disposed opposite to the base end, and a dopant attached to or contained within the lumen, a dopant attached to or contained within the outer surface, a dopant attached to or contained within the top end, or any combination thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 69, 69, 70, 71, 72, 73, 74, 75, 76, 77, 155, 190, 191, 208, 209, 210, 211)
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78. A method of making an antennae assembly electrode, comprising the steps of:
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surmounting a substrate with an electrically conductive layer; surmounting an assembly of antennae on the electrically conductive layer giving rise to the antennae being vertically oriented with respect to the electrically conductive layer, wherein each of the antennae comprises a MWNT comprising a base end being attached to the electrically conductive layer;
a mid-section comprising an outer surface surrounding a lumen, wherein at least a portion of the outer surface of the mid-section is capable of being in fluidic contact with an environment in contact with the antennae; and
a top end being disposed opposite to the base end; anddoping at least a portion of the MWNT with a cladding, a covalent bond linkage, a functional dopant molecule, a fill material, or any combination thereof. - View Dependent Claims (79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116, 117, 118, 119, 120, 121, 122, 123, 124, 125, 126, 127, 128, 129, 130, 131, 132, 133, 134, 135, 136, 137, 138, 139, 140, 141, 142, 143, 144, 145, 146, 147, 148, 149, 150, 151, 152, 153, 154, 156, 157, 158, 159, 160, 161, 162, 163, 164, 165, 166, 167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 178, 179, 180, 181, 182, 183, 184, 185, 186, 187, 188, 189)
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192. An antennae assembly field-effect transistor, comprising:
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a substrate comprising a source and a drain; a gate oxide layer at least partially surmounting the substrate, source and drain; an electrically conductive layer at least partially surmounting the gate oxide layer; and an assembly of doped MWNT antennae vertically oriented with respect to the electrically conductive layer.
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193. A sensor, comprising:
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at least two electrodes situated on a substrate, wherein at least one of the electrodes comprises an antennae assembly electrode, wherein the antennae assembly electrode comprises an electrically conductive layer at least partially surmounting a substrate; and an assembly of doped antennae vertically oriented with respect to the electrically conductive layer, wherein each of the doped antennae comprises a doped MWNT comprising; a base end attached to the electrically conductive layer, a mid-section comprising an outer surface surrounding a lumen, wherein at least a portion of the outer surface of the mid-section is capable of being in fluidic contact with an environment in contact with the antennae; a top end disposed opposite to the base end, and a dopant attached to or contained within the lumen, a dopant attached to or contained within the outer surface, a dopant attached to or contained with the top end, or any combination thereof. - View Dependent Claims (194, 195, 196, 197, 198, 199, 200, 201, 202, 203, 204)
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205. An antennae assembly electrode, comprising:
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an electrically conductive layer at least partially surmounting a substrate; and an assembly of antennae vertically oriented with respect to the electrically conductive layer, wherein each of the antennae comprises a MWNT comprising; a base end attached to the electrically conductive layer, a mid-section comprising an outer surface surrounding a lumen, wherein at least a portion of the outer surface of the mid-section is capable of being in fluidic contact with an environment in contact with the antennae; and a top end disposed opposite to the base end. - View Dependent Claims (206, 207)
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212. A method of making an antennae assembly electrode, comprising the steps of:
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surmounting a substrate with an electrically conductive layer; and surmounting an assembly of antennae on the electrically conductive layer giving rise to the antennae being vertically oriented with respect to the electrically conductive layer, wherein each of the antennae comprises a MWNT comprising a base end being attached to the electrically conductive layer;
a mid-section comprising an outer surface surrounding a lumen; and
a top end being disposed opposite to the base end. - View Dependent Claims (213, 214, 215)
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216. A method of growing non-aligned MWNTs on a substrate, comprising:
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depositing a nickel metal catalyst on a substrate; and contacting the nickel metal catalyst with a gas mixture comprising a carrier gas and a carbon source gas at a temperature in the range of from about 650°
C. to about 750°
C., the carbon source gas comprising acetylene, wherein the substrate comprises silicon, silicon dioxide, silicon nitride, phosphorus doped poly silicon, or boron doped P-type silicon, to give rise to non-aligned MWNTs attached to the nickel metal catalyst.
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217. A method of growing aligned MWNTs on a substrate, comprising:
- contacting a substrate with a gas comprising a carrier gas and a carbon source gas at a temperature in the range of from about 800°
C. to about 960°
C., the carbon source gas comprising iron (II) phthalocyanine, wherein the substrate comprises silicon, silicon dioxide, silicon nitride, phosphorus doped poly silicon, or boron doped P-type silicon, to give rise to aligned MWNTs attached to the substrate. - View Dependent Claims (218)
- contacting a substrate with a gas comprising a carrier gas and a carbon source gas at a temperature in the range of from about 800°
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219. A method of growing aligned MWNTs on a substrate, comprising:
- depositing a nickel metal catalyst on the titanium barrier layer; and
contacting the nickel metal catalyst with a gas mixture comprising a carrier gas and a carbon source gas at a temperature in the range of from about 650°
C. to about 750°
C., the carrier gas comprising argon, ammonia and hydrogen, the carbon source gas comprising acetylene, wherein the substrate comprises silicon, silicon dioxide, silicon nitride, phosphorus doped poly silicon, or boron doped P-type silicon, to give rise to aligned MWNTs attached to the nickel metal catalyst.
- depositing a nickel metal catalyst on the titanium barrier layer; and
Specification