Organic light-emitting display device and method of manufacturing the same

• US 20110163309A1
• Filed: 10/29/2010
• Published: 07/07/2011
• Est. Priority Date: 01/07/2010
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Yang, Hui-Won, Im, Ki-Ju, Choi, Chaun-Gi
• Granted Patent: US 8,592,809 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment

Abstract

An organic light-emitting display device includes a substrate, a plurality of thin-film transistors on the substrate, each thin-film transistor including an active layer, a planarization layer on the thin-film transistors, a first electrode on the planarization layer and electrically connected to a thin-film transistor, and an ion blocking layer on the planarization layer, the ion blocking layer overlapping the active layer.

Claims

1. An organic light-emitting display device, comprising:

a substrate;

a plurality of thin-film transistors on the substrate, each thin-film transistor including an active layer;

a planarization layer on the thin-film transistors;

a first electrode on the planarization layer and electrically connected to the thin-film transistor; and

an ion blocking layer on the planarization layer, the ion blocking layer overlapping the active layer.

2. The organic light-emitting display device as claimed in claim 1, wherein the active layer includes an oxide semiconductor material.

3. The organic light-emitting display device as claimed in claim 2, wherein the oxide semiconductor material includes at least one of zinc oxide (ZnO), tin oxide (SnO), gallium-indium-zinc oxide (Ga—

In—

Zn—

O), indium-zinc oxide (In—

Zn—

O), and indium-tin oxide (In—

Sn—

O).

4. The organic light-emitting display device as claimed in claim 3, wherein the active layer further comprises a dopant in the oxide semiconductor material, the dopant including aluminum (Al), nickel (Ni), copper (Cu), tantalum (Ta), hafnium (Hf), or titanium (Ti).

5. The organic light-emitting display device as claimed in claim 1, wherein the active layer includes polycrystalline silicon.

6. The organic light-emitting display device as claimed in claim 1, wherein the ion blocking layer includes a plurality of discrete segments, each segment corresponding to a respective thin-film transistor.

7. The organic light-emitting display device as claimed in claim 1, wherein the ion blocking layer is a single continuous element on the planarization layer.

8. The organic light-emitting display device as claimed in claim 1, wherein the first electrode and the ion blocking layer are insulated from each other.

9. The organic light-emitting display device as claimed in claim 1, wherein bottom surfaces of the first electrode and the ion blocking layer are substantially coplanar.

10. The organic light-emitting display device as claimed in claim 1, wherein the first electrode and the ion blocking layer include a same material.

11. The organic light-emitting display device as claimed in claim 1, wherein the first electrode and the ion blocking layer include different materials.

12. The organic light-emitting display device as claimed in claim 1, wherein the ion blocking layer includes a conductive material.

13. The organic light-emitting display device as claimed in claim 1, further comprising a ground electrically connected to the ion blocking layer.

14. The organic light-emitting display device as claimed in claim 1, wherein the thin-film transistor has a bottom gate structure with a gate electrode between the substrate and the active layer.

15. An organic light-emitting display device, comprising:

a substrate having a pixel region and a non-pixel region;

a plurality of thin-film transistors on the non-pixel region of the substrate, each thin-film transistor including an active layer;

a first electrode on the pixel region of the substrate and electrically connected to a thin-film transistor of the thin-film transistors; and

an ion blocking layer on the non-pixel region, the ion blocking layer overlapping the active layer.

16. A method of manufacturing an organic light-emitting display device, the method comprising:

forming a plurality of thin-film transistors on a substrate, each thin-film transistor including an active layer;

forming a planarization layer on the thin-film transistors, such that the thin-film transistors are covered;

forming a first electrode and an ion blocking layer on the planarization layer, such that the first electrode is electrically connected to a thin-film transistor of the thin-film transistors and the blocking layer overlaps the active layer;

forming a pixel defining layer, such that the ion blocking layer is covered and a part of the first electrode is exposed; and

forming an organic material layer and a second electrode on the first electrode to form a unit pixel.

17. The method as claimed in claim 16, wherein forming the first electrode and the ion blocking layer includes:

forming a conductive layer on the planarization layer;

forming a first mask pattern on the conductive layer; and

removing a part of the conductive layer using the first mask pattern as an etching mask to form the first electrode and the ion blocking layer at the same time.

18. The method as claimed in claim 16, wherein forming the first electrode and the ion blocking layer includes:

forming a second mask pattern on the planarization layer, such that a region of the ion blocking layer is covered and a region of the first electrode is exposed;

forming the first electrode on the planarization layer exposed by the second mask pattern;

removing the second mask pattern;

forming a third mask pattern on the planarization layer, such that the first electrode is covered and a region of the ion blocking layer is exposed;

forming the ion blocking layer on the planarization layer exposed by the third mask pattern; and

removing the third mask pattern.

19. The method as claimed in claim 16, wherein forming the first electrode and the ion blocking layer includes:

forming a fourth mask pattern on the planarization layer, such that a region of the first electrode is covered and a region of the ion blocking layer is exposed;

forming the ion blocking layer on the planarization layer exposed by the fourth mask pattern;

removing the fourth mask pattern;

forming a fifth mask pattern on the planarization layer, such that the ion blocking layer is covered and a region of the first electrode is exposed;

forming the first electrode on the planarization layer exposed by the fifth mask pattern; and

removing the fifth mask pattern.

20. The method as claimed in claim 16, wherein forming the first electrode and the ion blocking layer includes:

forming a sixth mask pattern on the planarization layer, such that a region of the first electrode and the ion blocking layer are exposed;

forming the first electrode and the ion blocking layer at the same time on the planarization layer exposed by the sixth mask pattern; and

removing the sixth mask pattern.