Semiconductor Device and Manufacturing Method Thereof
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
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Citations
84 Claims
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1-38. -38. (canceled)
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39. A semiconductor device comprising:
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an oxide semiconductor layer including a channel region; and a gate electrode adjacent to the oxide semiconductor layer, wherein the oxide semiconductor layer comprises an In—
Ga—
Zn—
O based oxide semiconductor material added with at least one element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony, bismuth, fluorine, chlorine, bromine, and iodine. - View Dependent Claims (40, 41, 42, 43, 44)
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45. A semiconductor device comprising:
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an oxide semiconductor layer including a channel region; and a gate electrode adjacent to the oxide semiconductor layer, wherein the oxide semiconductor layer comprises an In—
Ga—
Zn—
O based oxide semiconductor material added with nitrogen. - View Dependent Claims (46, 47, 48, 49, 50, 51)
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52. A semiconductor device comprising:
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an oxide semiconductor layer including a channel region; and a gate electrode adjacent to the oxide semiconductor layer, wherein the oxide semiconductor layer comprises indium, gallium, zinc and nitrogen. - View Dependent Claims (53, 54, 55, 56, 57, 58)
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59. A display device comprising:
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a transistor; and a pixel electrode electrically connected to the transistor, the transistor comprising; an oxide semiconductor layer including a channel region; and a gate electrode adjacent to the oxide semiconductor layer, wherein the oxide semiconductor layer comprises an In—
Ga—
Zn—
O based oxide semiconductor material added with at least one element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony, bismuth, fluorine, chlorine, bromine, and iodine. - View Dependent Claims (60, 61, 62, 63, 64, 65, 66)
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67. A display device comprising:
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a transistor; and a pixel electrode electrically connected to the transistor, the transistor comprising; an oxide semiconductor layer including a channel region; and a gate electrode adjacent to the oxide semiconductor layer, wherein the oxide semiconductor layer comprises an In—
Ga—
Zn—
O based oxide semiconductor material added with nitrogen. - View Dependent Claims (68, 69, 70, 71, 72, 73, 74, 75)
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76. A display device comprising:
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a transistor; and a pixel electrode electrically connected to the transistor, the transistor comprising; an oxide semiconductor layer including a channel region; and a gate electrode adjacent to the oxide semiconductor layer, wherein the oxide semiconductor layer comprises indium, gallium, zinc and nitrogen. - View Dependent Claims (77, 78, 79, 80, 81, 82, 83, 84)
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Specification