Semiconductor Component Arrangement Comprising a Trench Transistor
First Claim
1. A semiconductor component arrangement comprising:
- a semiconductor body having a first side and a second side;
a trench transistor structure integrated in the semiconductor body, the trench transistor structure comprising at least one trench and at least one gate electrode positioned in said at least one trench;
at least one further trench, at least one electrode structure disposed in the at least one further trench, the at least one electrode structure comprising at least one electrode, wherein at least one section of the at least one electrode has the same geometrical basic structure as the at least one gate electrode, and wherein the at least one electrode of the electrode structure is a capacitor electrode of a capacitor structure.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.
27 Citations
10 Claims
-
1. A semiconductor component arrangement comprising:
-
a semiconductor body having a first side and a second side; a trench transistor structure integrated in the semiconductor body, the trench transistor structure comprising at least one trench and at least one gate electrode positioned in said at least one trench; at least one further trench, at least one electrode structure disposed in the at least one further trench, the at least one electrode structure comprising at least one electrode, wherein at least one section of the at least one electrode has the same geometrical basic structure as the at least one gate electrode, and wherein the at least one electrode of the electrode structure is a capacitor electrode of a capacitor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
Specification