Synchronous buck converter using shielded gate field effect transistors
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Accused Products
Abstract
A synchronous buck converter includes a high-side switch and a low-side switch serially coupled to one another. The low-side switch includes a field effect transistor that comprises: a trench extending into a drift region of the field effect transistor; a shield electrode in a lower portion of the trench, wherein the shield electrode is insulated from the drift region by a shield dielectric; a gate electrode in the trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric; source regions adjacent the trench; a source metal contacting the source regions; and a resistive element having one end contacting the shield electrode and another end contacting the source metal in the field effect transistor.
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Citations
45 Claims
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1-25. -25. (canceled)
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26. A synchronous buck converter comprising:
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a high-side switch and a low-side switch serially coupled to one another, wherein the low-side switch includes a field effect transistor which comprises; a trench extending into a drift region of the field effect transistor; a shield electrode in a lower portion of the trench, wherein the shield electrode is insulated from the drift region by a shield dielectric; a gate electrode in the trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric; source regions adjacent the trench; a source metal contacting the source regions; and a resistive element having one end contacting the shield electrode and another end contacting the source metal in the field effect transistor. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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40. A synchronous buck converter comprising:
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a high-side switch and a low-side switch serially coupled to one another, wherein the low-side switch includes a field effect transistor which comprises; a plurality of trenches extending into a drift region; a shield electrode in a lower portion of each trench, wherein the shield electrode is insulated from the drift region by a shield dielectric; a gate electrode in each trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric; source regions adjacent the trenches; a source metal contacting the source regions; and a resistive element having one end contacting the shield electrode and another end contacting the source metal. - View Dependent Claims (41, 42, 43, 44, 45)
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Specification