MAGNETIC TUNNEL JUNCTION TRANSISTOR DEVICE
First Claim
1. A magnetic tunnel junction transistor (MTJT) device comprising:
- a source-drain region comprising a source electrode and a drain electrode;
a double MTJ element formed between the source electrode and the drain electrode and comprising a free magnetic layer at a center region thereof; and
a gate region adjacent to the source-drain region and comprising an insulating barrier layer formed on an upper layer of the double MTJ element and a gate electrode formed on the barrier layer,the magnetic tunnel junction device switching a magnetization orientation of the free magnetic layer by application of a gate voltage to the gate electrode, thereby changing a resistance of the source-drain region.
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Abstract
A magnetic tunnel junction transistor (MTJT) device includes a source-drain region comprising a source electrode and a drain electrode, a double MTJ element formed between the source electrode and the drain electrode and comprising a free magnetic layer at a center region thereof, and a gate region adjacent to the source-drain region and comprising an insulating barrier layer formed on an upper layer of the double MTJ element and a gate electrode formed on the insulating barrier layer. The MTJT device switches a magnetization orientation of the free magnetic layer by application of a gate voltage to the gate electrode, thereby changing a resistance of the source-drain region.
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Citations
23 Claims
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1. A magnetic tunnel junction transistor (MTJT) device comprising:
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a source-drain region comprising a source electrode and a drain electrode; a double MTJ element formed between the source electrode and the drain electrode and comprising a free magnetic layer at a center region thereof; and a gate region adjacent to the source-drain region and comprising an insulating barrier layer formed on an upper layer of the double MTJ element and a gate electrode formed on the barrier layer, the magnetic tunnel junction device switching a magnetization orientation of the free magnetic layer by application of a gate voltage to the gate electrode, thereby changing a resistance of the source-drain region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A magnetic tunnel junction transistor (MTJT) device comprising:
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three electrical terminals including a source electrode, and a drain electrode and gate electrode; a double MTJ element formed between the source electrode and the drain electrode and comprising a free magnetic layer at a center region thereof; and an insulating barrier layer formed on an upper layer of the double MTJ element contacting the gate electrode, the magnetic tunnel junction device switching a magnetization orientation of the free magnetic layer by applying a gate voltage to the gate electrode, thereby changing a resistance between the source electrode and the drain electrode.
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17. A method for forming a magnetic tunnel junction transistor (MTJT) device, the method comprising:
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forming a source-drain region comprising a source electrode and a drain electrode; forming a double MTJ element between the source electrode and the drain electrode and comprising a free magnetic layer at a center region thereof; and forming a gate region adjacent to the source-drain region and comprising an insulating barrier layer formed on an upper layer of the double MTJ element and a gate electrode formed on the insulating barrier layer; wherein a magnetization orientation of the free magnetic layer is switched by application of a gate voltage to the gate electrode, thereby changing a resistance of the source-drain region. - View Dependent Claims (18)
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19. A method for operating a magnetic tunnel junction transistor (MTJT) device having a source electrode, and a drain electrode and gate electrode, a double MTJ element formed between the source electrode and the drain electrode and comprising a free magnetic layer at a center region thereof, and an insulating barrier layer formed on an upper layer of the double MTJ element contacting the gate electrode, the method comprising:
switching a magnetization orientation of the free magnetic layer by application of a gate voltage to the gate electrode, thereby changing a resistance between the source electrode and the drain electrode. - View Dependent Claims (20, 21, 22, 23)
Specification