PLASMA CVD DEVICE, DLC FILM, AND METHOD FOR DEPOSITING THIN FILM
First Claim
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1. A plasma CVD device comprising:
- a chamber,a holding electrode disposed in said chamber and adapted for holding a substrate on which a film is to be deposited,a high frequency power supply connected electrically with said holding electrode,a counter electrode disposed opposite to said substrate on which a film is to be deposited held by said holding electrode and connected with an earth power supply or a float power supply,a raw material gas supply mechanism for supplying a raw material gas into a space between said counter electrode and said holding electrode, andan evacuation mechanism for evacuating the interior of said chamber,whereinsaid counter electrode is formed so as to cover a deposition surface of said substrate on which a film is to be deposited held by said holding electrode,the maximum gap between said counter electrode and said holding electrode at an opening part where a space on the inner side of said counter electrode is connected to a space on the outer side of said counter electrode is 5 mm or less, anda surface area “
a”
of said holding electrode and a surface area “
b”
of said counter electrode satisfy a formula below,
b/a≧
2.
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Abstract
To provide a plasma CVD device capable of increasing voltage VDC that is a DC component generated at the electrode during high-frequency discharge in CVD deposition. The plasma CVD device according to the present invention includes a chamber 1, a holding electrode 2 disposed in the interior of the chamber and adapted for holding a substrate on which a film is to be deposited, a high frequency power supply 8 connected electrically with the holding electrode, a counter electrode 12 disposed opposite to the substrate on which a film is to be deposited held by the holding electrode and connected with an earth power supply or a float power supply, a raw material gas supply mechanism for supplying a raw material gas into a space 13 between the counter electrode and the holding electrode, and an evacuation mechanism for evacuating the interior of the chamber, wherein the surface area “a” of the holding electrode and the surface area “b” of the counter electrode satisfy a formula below,
b/a≧2.
154 Citations
15 Claims
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1. A plasma CVD device comprising:
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a chamber, a holding electrode disposed in said chamber and adapted for holding a substrate on which a film is to be deposited, a high frequency power supply connected electrically with said holding electrode, a counter electrode disposed opposite to said substrate on which a film is to be deposited held by said holding electrode and connected with an earth power supply or a float power supply, a raw material gas supply mechanism for supplying a raw material gas into a space between said counter electrode and said holding electrode, and an evacuation mechanism for evacuating the interior of said chamber, wherein said counter electrode is formed so as to cover a deposition surface of said substrate on which a film is to be deposited held by said holding electrode, the maximum gap between said counter electrode and said holding electrode at an opening part where a space on the inner side of said counter electrode is connected to a space on the outer side of said counter electrode is 5 mm or less, and a surface area “
a”
of said holding electrode and a surface area “
b”
of said counter electrode satisfy a formula below,
b/a≧
2.- View Dependent Claims (4, 5, 6, 11, 12, 13)
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2-3. -3. (canceled)
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7. A plasma CVD device comprising:
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a chamber, a holding electrode disposed in said chamber and adapted for holding a substrate on which a film is to be deposited, a first earth power supply connected electrically with said holding electrode via a first switch, a high frequency power supply connected electrically with said holding electrode via a second switch, a counter electrode disposed opposite to said substrate on which a film is to be deposited held by said holding electrode and connected electrically with said high frequency power supply via said second switch, a raw material gas supply mechanism for supplying a raw material gas into a space between said counter electrode and said holding electrode, an evacuation mechanism for evacuating an interior of said chamber, and a second earth power supply connected electrically with said counter electrode via a third switch, wherein a surface area “
a”
of said holding electrode and a surface area “
b”
of said counter electrode satisfy a formula below,
b/a≧
2.- View Dependent Claims (8, 9, 10, 14, 15)
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Specification
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Current AssigneeAdvanced Materials Technologies, Inc. (Triumph Group, Inc.)
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Original AssigneeAdvanced Materials Technologies, Inc. (Triumph Group, Inc.)
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InventorsAbe, Koji, Hayakawa, Haruhito, Kawabe, Takeharu, Honda, Yuuji
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Application NumberUS13/001,089Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current423/446CPC Class CodesC23C 16/509 using internal electrodesH01J 37/32091 the radio frequency energy ...H01J 37/32541 ShapeH01J 37/32706 Polarising the substrate
