Semiconductor Device and Method For Manufacturing Semiconductor Device
First Claim
1. A method for manufacturing a semiconductor device, comprising:
- forming a first wiring over a substrate;
forming an insulating film containing yttria-stabilized zirconia over the first wiring;
forming a semiconductor film on the insulating film containing yttria-stabilized zirconia;
forming an island-like semiconductor film by selective etching of the semiconductor film; and
forming a second wiring over the island-like semiconductor film.
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Accused Products
Abstract
An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.
59 Citations
20 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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forming a first wiring over a substrate; forming an insulating film containing yttria-stabilized zirconia over the first wiring; forming a semiconductor film on the insulating film containing yttria-stabilized zirconia; forming an island-like semiconductor film by selective etching of the semiconductor film; and forming a second wiring over the island-like semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising:
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forming a gate electrode over a substrate; forming an insulating film containing yttria-stabilized zirconia over the gate electrode; forming a semiconductor film on the insulating film containing yttria-stabilized zirconia; selectively etching the semiconductor film to form a semiconductor layer including a channel formation region over the gate electrode with the insulating film interposed therebetween; and forming source and drain electrodes over the semiconductor layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device, comprising:
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forming a first wiring over a substrate; forming an insulating film containing yttria-stabilized zirconia over the first wiring; forming a semiconductor film on the insulating film containing yttria-stabilized zirconia; forming an amorphous semiconductor film over the semiconductor film; selectively etching the semiconductor film and the amorphous semiconductor film to form a semiconductor layer including a channel formation region over the first wiring with the insulating film interposed therebetween; and forming a second wiring over the semiconductor layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification