HIGH PURITY MONOALKYLTIN COMPOUNDS AND USES THEREOF
First Claim
Patent Images
1. Composition comprising:
- from 85 wt % to 99.999 wt % of at least one monoalkyltin compound of formula RSn(T)3, in which R is linear, branched or cyclic C1-C20 alkyl, and T is a ligand;
from 0.001 wt % to 10 wt % of at least one di-alkyltin compound of formula R2Sn(T)2;
from 0.001 wt % to 5 wt % of at least one tri-alkyltin compound of formula R3Sn(T); and
from 0 wt % to 5 wt % of one or more impurities.
4 Assignments
0 Petitions
Accused Products
Abstract
The present invention relates to high purity monoalkyltin compounds, more specifically to alkyltin compound compositions containing monoalkyltin as major compound, and minor quantities of di- and/or trialkyltin compounds. The present invention also relates to the preparation processes of such high purity monoalkyltin compounds, as well as to the uses of said monoalkyltin compounds as chlorine-containing polymer-stabilisers, glass coating chemicals and catalysts, as well as articles comprising at least one polymer matrix and a high purity monoalkyltin compound.
-
Citations
25 Claims
-
1. Composition comprising:
-
from 85 wt % to 99.999 wt % of at least one monoalkyltin compound of formula RSn(T)3, in which R is linear, branched or cyclic C1-C20 alkyl, and T is a ligand; from 0.001 wt % to 10 wt % of at least one di-alkyltin compound of formula R2Sn(T)2; from 0.001 wt % to 5 wt % of at least one tri-alkyltin compound of formula R3Sn(T); and from 0 wt % to 5 wt % of one or more impurities. - View Dependent Claims (2, 3, 4, 5, 6, 15, 16, 17, 18, 23)
-
-
7. Process of preparation of a composition, comprising:
- from 85 wt % to 99.999 wt % of at least one monoalkyltin compound of formula RSn(T)3, in which R is linear, branched or cyclic C1-C20 alkyl, and T is a ligand;
from 0.001 wt % to 10 wt % of at least one di-alkyltin compound of formula R2Sn(T)2;
from 0.001 wt % to 5 wt % of at least one tri-alkyltin compound of formula R3Sn(T); andfrom 0 wt % to 5 wt % of one or more impurities comprising; α
) hydrostannylating a 1-alkene to the corresponding mono-alkyltin trihalide RSn(Hal)3 in the presence of a transition metal catalyst, tin(II) dihalide and hydrogen halide; andβ
) converting the mono-alkyltin trihalide RSn(Hal)3 to RSn(T)3 by contacting the mono-alkyltin trihalide RSn(Hal)3 with a compound of formula H-T in the presence of a suitable base or, alternatively, by reacting RSn(Hal)3 to alkylstannoic acid RSn(O)OH using a hydroxide base followed by contacting the alkylstannoic acid with a compound of formula H-T under elimination of water, wherein R is linear, branched or cyclic C1-C20, and T is a ligand. - View Dependent Claims (9, 24, 25)
- from 85 wt % to 99.999 wt % of at least one monoalkyltin compound of formula RSn(T)3, in which R is linear, branched or cyclic C1-C20 alkyl, and T is a ligand;
-
8. Process of preparation of a composition comprising:
- from 85 wt % to 99.999 wt % of at least one monoalkyltin compound of formula RSn(T)3, in which R is linear, branched or cyclic C1-C20 alkyl, and T is a ligand;
from 0.001 wt % to 10 wt % of at least one di-alkyltin compound of formula R2Sn(T)2;
from 0.001 wt % to 5 wt % of at least one tri-alkyltin compound of formula R3Sn(T); and
from 0 wt % to 5 wt % of one or more impurities comprising the steps of;a) preparing a solution of stannous halide SnHal2 in a solvent, together with a transition metal-based catalyst; b) reacting the obtained solution with a molar excess of the an alkene or cycloalkene precursor of the R radical, at a temperature ranging between room temperature to 200°
C., in the presence of hydrogen halide (H-Hal) and optionally metallic tin (Sn);c) optionally removing the solvent of the reaction medium, by stripping or vacuum-distillation of the solvent; d) optionally filtering the crude reaction medium; e) adding a 2- to 5-fold molar excess (relative to the obtained monoalkyltin trihalide) of H-T, and water, under stirring; f) neutralising the reaction medium, with alkali or alkaline-earth hydroxide, and forming a water layer and an organic layer; g) separating the water layer from the organic layer; and h) removing the solvent from the organic layer, and optionally filtering to recover RSn(T)3 of high purity, wherein R is linear, branched or cyclic C1-C20 and T is a ligand. - View Dependent Claims (10, 11)
- from 85 wt % to 99.999 wt % of at least one monoalkyltin compound of formula RSn(T)3, in which R is linear, branched or cyclic C1-C20 alkyl, and T is a ligand;
-
12-14. -14. (canceled)
-
19. Composition comprising a Chlorine-containing polymer and a composition comprising:
- from 85 wt % to 99.999 wt % of at least one monoalkyltin compound of formula RSn(T)3, in which R is linear, branched or cyclic C1-C20 alkyl, and T is a ligand;
from 0.001 wt % to 10 wt % of at least one di-alkyltin compound of formula R2Sn(T)2;
from 0.001 wt % to 5 wt % of at least one tri-alkyltin compound of formula R3Sn(T), and from 0 wt % to 5 wt % of one or more impurities, optionally further comprising at least one co-stabiliser, and/or one or more additive(s).
- from 85 wt % to 99.999 wt % of at least one monoalkyltin compound of formula RSn(T)3, in which R is linear, branched or cyclic C1-C20 alkyl, and T is a ligand;
-
20. Article comprising at least one polymer matrix and a composition comprising:
- from 85 wt % to 99.999 wt % of at least one monoalkyltin compound of formula RSn(T)3, in which R is linear, branched or cyclic C1-C20 alkyl, and T is a ligand;
from 0.001 wt % to 10 wt % of at least one di-alkyltin compound of formula R2Sn(T)2;
from 0.001 wt % to 5 wt % of at least one tri-alkyltin compound of formula R3Sn(T); and
from 0 wt % to 5 wt % of one or more impurities and optionally one or more additive(s) and/or co-stabiliser(s). - View Dependent Claims (21)
- from 85 wt % to 99.999 wt % of at least one monoalkyltin compound of formula RSn(T)3, in which R is linear, branched or cyclic C1-C20 alkyl, and T is a ligand;
-
22. (canceled)
Specification