Photonic Device And Method Of Making Same Using Nanowires

• US 20110168256A1
• Filed: 10/03/2008
• Published: 07/14/2011
• Est. Priority Date: 12/21/2007
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Kabayashi, Nobuhiko, Wang, Shih-Yuan, Williams, R. Stanley
• Granted Patent: US 8,273,983 B2
• Time in Patent Office: Days
• US Class Current: 136/258
• CPC Class Codes: H01L 31/035227 the quantum structure being quantum wires, or nanorods carbon nanotubes H10K85/211
• CPC Class Codes: H01L 31/036 characterised by their crystalline structure or particular orientation of the crystalline planes
• CPC Class Codes: H01L 31/06 characterised by potential barriers
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01L 31/109 the potential barrier being of the PN heterojunction type
• CPC Class Codes: H01L 31/184 the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials

Abstract

A photonic device, a method of making the device and a nano-scale antireflector employ a bramble of nanowires. The photonic device and the method include a first layer of a microcrystalline material provided on a substrate surface and a second layer of a microcrystalline material provided on the substrate surface horizontally spaced from the first layer by a gap. The photonic device and the method further include, and the nano-scale antireflector includes, the bramble of nanowires formed between the first layer and the second layer. The nanowires have first ends integral to crystallites in each of the first layer and the second layer. The nanowires of the bramble extend into the gap from each of the first layer and the second layer.

Claims

1. A photonic device comprising:

a first layer of a microcrystalline material on a substrate surface;

a second layer of a microcrystalline material on the substrate surface, the second layer being horizontally spaced from the first layer by a gap; and

a bramble of nanowires between the first layer and the second layer, the nanowires of the bramble having first ends integral to crystallites in each of the first layer and the second layer, the nanowires of the bramble extending into the gap from each of the first layer aid the second layer.

2. The photonic device of claim 1, wherein both the first layer and the second layer have respective horizontal surfaces and vertical surfaces relative to a horizontal plane of the substrate surface, the vertical surface of the first layer facing the vertical surface of the second layer, the vertical surfaces being spaced apart to delineate the gap, the first ends of the nanowires of the bramble being integral to crystallites of each the vertical surfaces and the horizontal surfaces.

3. The photonic device of claim 1, further comprising separate electrical contacts to the first layer and the second layer, the bramble of nanowires being electrically accessible by the separate electrical contacts.

4. The photonic device of claim 1, wherein the substrate comprises a material that insulates the first layer from the second layer, each of the first layer, the second layer and the bramble of nanowires independently comprising a semiconductor material.

5. The photonic device of claim 1, wherein the bramble of nanowires comprises one or both of a heterojunction and a p-n junction.

6. The photonic device of claim 1, further comprising a p-n junction located one or more of in the nanowires, between the nanowires, between the first layer and the nanowires, between the second layer and the nanowires, and between the first layer and the second layer.

7. The photonic device of claim 1, further comprising a p-i-n junction between the first layer and the second layer, the bramble of nanowires being an intrinsic region of the p-i-n junction.

8. The photonic device of claim 1, wherein the photonic device is one of a photodetector and a solar cell.

9. The photonic device of claim 1, wherein the bramble of nanowires is a nano-scale antireflector, the nano-scale antireflector being light absorptive both in a wide band of frequencies and over a wide range of incident angles, such that negligible light is reflected from the gap.

10. The photonic device of claim 1, wherein a nanowire extending into the gap from a vertical surface of the first layer is connected to a facing vertical surface of the second layer.

11. The photonic device of claim 1, wherein a nanowire extending into the gap from the first layer is connected to a nanowire extending into the gap from the second layer.

12. A photonic device comprising:

a first layer of a microcrystalline material on a substrate surface;

a second layer of a microcrystalline material on the substrate surface horizontally spaced from the first layer by a gap; and

a nano-scale antireflector in the gap between the first layer and the second layer, the nano-scale antireflector being light absorptive both in a wide band of optical frequencies and over a wide range of incident angles, such that negligible light is reflected from the gap.

13. The photonic device of claim 12, wherein the nano-scale antireflector comprises a bramble of nanowires, the bramble comprising a plurality of randomly oriented nanowires having first ends integral to crystallites in each of the first layer aid the second layer, the nanowires of the bramble extending into the gap from the first layer and the second layer.

14. The photonic device of claim 13, wherein the first layer and the second layer have both vertical surfaces and horizontal surfaces, the vertical surface of the first layer feeing the vertical surface of the second layer, the vertical surfaces being spaced apart to delineate the gap, the nanowires extending from crystallites of the vertical surfaces and horizontal surfaces of each of the first layer and the second layer, such that the bramble comprises the nanowires extending into the gap from opposing directions.

15. A method of making a photonic device comprising:

providing a first layer of a microcrystalline material on a substrate surface;

providing a second layer of a microcrystalline material on a substrate surface horizontally spaced from the first layer by a gap; and

forming a bramble of nanowires between the first layer and the second layer, the nanowires of the bramble having first ends integral to crystallites in each of the first layer and the second layer, such that the nanowires of the bramble extend into the gap from opposing directions.

16. The method of making of claim 15, wherein the first layer and the second layer are provided with vertical surfaces and horizontal surfaces relative to the substrate surface, the vertical surface of the first layer facing the vertical surface of the second layer, the facing vertical surfaces being spaced apart to delineate the gap.

17. The method of making of claim 15, wherein forming the bramble of nanowires comprises growing nanowires on vertical surfaces and horizontal surfaces of each of the first layer and the second layer, such that some of the nanowires on each of the first layer and the second layer extend into the gap.

18. The method of making of claim 15, wherein forming the bramble of nanowires comprises growing nanowires from the first layer and the second layer to connect to one another in the gap.

19. The method of making of claim 15, wherein forming the bramble of nanowires comprises growing a nanowire from a vertical surface of the first layer to connect to a facing vertical surface of the second layer, the facing vertical surfaces being spaced apart to delineate the gap.

20. The method of making of claim 15, further comprising providing a p-n junction one or more of in the nanowires, between the nanowires, between the first layer and the nanowires, between the second layer and the nanowires, and between the first layer and the second layer.