CARBON NANOTUBE BASED COMPOSITE SURFACE ENHANCED RAMAN SCATTERING (SERS) PROBE

• US 20110168954A1
• Filed: 12/02/2010
• Published: 07/14/2011
• Est. Priority Date: 12/02/2009
• Status: Abandoned Application

• Current Assignee: Carbon Design Innovations, Inc.
• Original Assignee: Carbon Design Innovations, Inc.
• Inventors: Stevens, Ramsey M.
• Application Number:
  US12/959,283
• Publication Number:
  US 20110168954A1
• Time in Patent Office: Days
• US Class Current: 252/502
• CPC Class Codes: G01N 21/658 enhancement Raman, e.g. surface plasmons
• CPC Class Codes: G01Q 70/12 Nanotube tips

Abstract

An electromagnetic and/or chemical enhancement which greatly enhances the Raman signal response for Surface Enhanced Raman is directed to molecular probe systems. Such molecular probe systems have many properties that make them ideal as probes for Scanning Probe Microscopy, Atomic Force Microscopy, and many other applications.

Claims

1. A process for fabricating a carbon nanotube (CNT) device, the process comprising:

applying a material to the CNT device enabling an enhanced Raman signal.

2. The process of claim 1, wherein the CNT device is created using Ion Flux Molding (IFM).

3. The process of claim 1, wherein the material is formed using one or more of:

a second thermal chemical vapor deposition (CVD) process;

a physical vapor deposition process;

a CVD process;

a plasma-enhanced CVD process;

an electrochemical deposition process;

a molecular beam epitaxy process;

an electrochemical deposition process;

a spin casting process;

an evaporation process;

a reactive growth process;

or

an atomic layer deposition process.

4. The process of claim 1, wherein the material is one or more of:

a silicon dioxide (SiO2) surface;

a doped silicon surface;

a compound silicon surface;

a polymer surface;

or

a lithographic resist surface.

5. The process of claim 1, wherein an intermediate layer is applied to improve adhesion of the material to the CNT.

6. The process of claim 1, wherein the material includes an insulating material.

7. The process of claim 1, wherein the material includes a semiconducting material.

8. The process of claim 1, wherein the material includes a conductive material.

9. The process of claim 1, wherein the material includes at least one of the following:

silver;

gold;

platinum;

copper;

or

rhodium.

10. The process of claim 1, wherein a property relating to the material can vary.

11. The process of claim 10, wherein the property is at least one of the following:

material property;

dielectric environment;

thickness;

volume;

arrangement;

size;

dimensions;

aspect ratio;

or

shape.

12. The process of claim 1, wherein the material is selected for at least one of the following properties:

Surface Enhanced Raman Scattering (SERS) effect;

Tip Enhanced Raman Spectroscopy (TERS) effect;

plasmon enhancement;

electromagnetic enhancement;

chemical enhancement;

incident angle;

target molecule;

wavelength;

or

polarization.

13. The process of claim 1, wherein the material is selected according to tip shape.

14. The process of claim 13, wherein one of the following properties factor into the tip shape:

cone angle;

or

tip radius.

15. The process of claim 1, wherein the CNT device varies in at least one of the following properties:

geometry;

incident angle;

resonant excitation;

spatial orientation;

curvature;

surface area;

volume;

size;

dimensions;

aspect ratio;

or

electromagnetic interaction.

16. The process of claim 15, wherein the electromagnetic interaction includes illumination at optical or other frequencies for electric field enhancement.

17. The process of claim 15, wherein the spatial orientation relates to neighboring nanostructures.

18. The process of claim 1, wherein the CNT device is a carbon nanofiber structure grown using a plasma enhanced chemical vapor deposition process.

19. The process of claim 1, wherein the CNT device is fabricated from silicon, silicon nitride, or silicon dioxide using lithographic processing.

20. The process of claim 1, wherein the CNT device has been modified by chemical reaction, material adherence decoration, or immersion of reactive or non-reactive species, for enhancement of probing interaction of other purpose.

21. The process of claim 1, wherein the CNT device is a single walled structure grown using a thermal chemical vapor deposition process.

22. The process of claim 1, wherein the CNT device is a multi-walled structure grown using a thermal chemical vapor deposition process.

23. The process of claim 1, wherein the CNT device is used in at least one of:

an atomic force microscope (AFM);

or

a scanning probe microscope (SPM).

24. The process of claim 1, wherein the CNT device is an array of probes.

25. The process of claim 9, wherein the CNT device is an array of probes.

26. The process of claim 24, wherein a length of the CNT device is exposed, wherein said exposed length being defined by a specific application for said CNT device.

27. The process of claim 1, wherein the CNT device is suitable for use in at least one of:

a field emitter;

a sensor;

a lithographic device;

a logic device;

an electrical contact;

or

an electrical interconnect.

28. The process of claim 24, wherein the CNT device is used in at least one of:

scanning probe microscope (SPM).

29. The process of claim 24, wherein the CNT device is suitable for use in at least one of:

a nanotube based antenna device;

nanotube tweezers;

a nanotube based manipulator device;

a nanotube based actuator;

or

a nanotube based lever arm.

30. The process of claim 24, wherein the CNT device is suitable for use in at least one of:

a field emitter;

a sensor;

a lithographic device;

a logic device;

an electrical contact;

or

an electrical interconnect.

31. A device comprising:

a carbon nanotube (CNT) which is a base of a nanostructure, wherein the nanostructure is comprised of more than one material.

32. The device of claim 31, wherein the CNT is created using Ion Flux Molding (IFM).

33. The device of claim 31, wherein the more than one material is formed using one or more of:

a second thermal chemical vapor deposition (CVD) process;

a physical vapor deposition process a CVD process;

a CVD process;

a plasma-enhanced CVD process;

an electrochemical deposition process

a spin casting process;

an evaporation process;

reactive growth process;

or

an atomic layer deposition process.

34. The device of claim 31, wherein the more than one material includes one or more of:

an silicon dioxide (SiO2) surface;

a doped silicon surface;

a compound silicon surface;

a polymer surface;

or

a lithographic resist surface.

35. The device of claim 31, wherein the more than one material is a material which increases adhesion to the CNT base or between layers.

36. The device of claim 31, wherein the more than one material includes an insulating material.

37. The device of claim 31, wherein the more than one material includes a semiconducting material.

38. The device of claim 31, wherein the more than one material includes a conductive material.

39. The device of claim 31, wherein the more than one material includes at least one of the following:

silver;

gold;

platinum;

copper;

or

rhodium.

40. The device of claim 31, wherein a property relating to the more than one material can vary.

41. The device of claim 40, wherein the property is at least one of the following:

material property;

dielectric environment;

thickness;

volume;

arrangement;

size;

dimensions;

aspect ratio;

or

shape.

42. The device of claim 31, wherein the more than one material is selected for at least one of the following properties:

Surface Enhanced Raman Scattering (SERS) effect;

Tip Enhanced Raman Spectroscopy (TERS) effect plasmon enhancement;

electromagnetic enhancement;

chemical enhancement;

incident angle;

target molecule;

wavelength;

or

polarization.

43. The device of claim 31, wherein a property of the more than one material is selected according to tip shape.

44. The device of claim 43, wherein one of the following properties factor into the tip shape:

cone angle;

or

tip radius.

45. The device of claim 31, wherein the CNT varies in at least one of the following properties:

geometry;

incident angle;

resonant excitation;

spatial orientation;

curvature;

surface area;

volume;

size;

dimensions;

aspect ratio;

or

electromagnetic interaction.

46. The device of claim 45, wherein the electromagnetic interaction includes illumination at optical frequencies for electric field enhancement.

47. The device of claim 45, wherein the spatial orientation relates to neighboring nanostructures.

48. The device of claim 31, wherein the CNT is a carbon nanofiber structure grown using a plasma enhanced chemical vapor deposition process.

49. The device of claim 31, wherein the device is fabricated from silicon, silicon nitride, or silicon dioxide using lithographic processing.

50. The device of claim 31, wherein the CNT has been modified by chemical reaction, material adherence decoration, or immersion of reactive or non-reactive species, for enhancement of probing interaction of other purpose.

51. The device of claim 31, wherein the CNT is a single walled structure grown using a thermal chemical vapor deposition process.

52. The device of claim 31, wherein the CNT is a multi-walled structure grown using a thermal checmical vapor dposition process.

53. The device of claim 31, wherein the CNT is used in at least one of:

an atomic force microscope (AFM);

or a scanning probe microscope (SPM).

54. The device of claim 31, wherein the CNT is an array of probes.

55. The device of claim 39, wherein the CNT is an array of probes.

56. The device of claim 54, wherein a length of the CNT is exposed, wherein said exposed length being defined by a specific application for said CNT device.

57. The device of claim 54, wherein the device is suitable for use in at least one of:

a field emitter;

a sensor;

a lithographic device;

a logic device;

an electrical contact;

or

an electrical interconnect.

58. The device of claim 54, wherein the CNT is used in at least one of:

an atomic force microscope (AFM);

or a scanning probe microscope (SPM).

59. The device of claim 31, wherein the CNT is suitable for use in at least one of:

a nanotube based antenna device;

nanotube tweezers;

a nanotube based manipulator device;

a nanotube based actuator;

or

a nanotube based lever arm.

60. The device of claim 31, wherein the CNT is suitable for use in at least one of:

a field emitter;

a sensor;

a lithographic device;

a logic device;

an electrical contact;

or

an electrical interconnect.

61. A method comprising:

fabricating a molecular sensor probe for an enhanced Raman signal, wherein the sensor probe is comprised of more than one material.

62. The method of claim 61, wherein the molecular sensor probe is created using Ion Flux Molding (IFM).

63. The method of claim 61, wherein the more than one material:

is grown;

is layered;

is deposited;

or

is coupled to the CNT base.

64. The method of claim 61, wherein the more than one material includes a polymer.

65. The method of claim 61, wherein the more than one material includes silicon dioxide.

66. The method of claim 61, wherein an intermediate material improves adhesion of the more than one material to the CNT.

67. The method of claim 61, wherein the more than one material includes an insulating material.

68. The method of claim 61, wherein the more than one material includes a semiconducting material.

69. The method of claim 61, wherein the more than one material includes a conductive material.

70. The device of claim 61, wherein more than one material includes at least one of the following:

silver;

gold;

platinum;

copper;

or

rhodium.

71. The method of claim 61, wherein a property relating to the more than one material can vary.

72. The method of claim 71, wherein the property is at least one of the following:

material property;

dielectric environment;

thickness;

volume;

arrangement;

size;

dimensions;

aspect ratio;

or

shape.

73. The method of claim 61, wherein the material is selected for at least one of the following properties:

Surface Enhanced Raman Scattering (SERS) effect;

Tip Enhanced Raman Spectroscopy (TERS) effect plasmon enhancement;

electromagnetic enhancement;

chemical enhancement;

incident angle;

target molecule;

wavelength;

or

polarization.

74. The method of claim 61, wherein the more than one material is selected according to tip shape.

75. The method of claim 74, wherein one of the following properties factor into the tip shape:

cone angle;

or

tip radius.

76. The method of claim 61, wherein the molecular sensor probe is a carbon nanotube.

77. The method of claim 61, wherein the molecular sensor probe varies in at least one of the following properties:

geometry;

incident angle;

resonant excitation;

spatial orientation;

curvature;

surface area;

volume;

size;

dimensions;

aspect ratio;

or

electromagnetic interaction.

78. The method of claim 77, herein the electromagnetic interaction includes illumination at optical frequencies for electric field enhancement.

79. The method of claim 77, wherein the spatial orientation relates to neighboring nanostructures.

80. The method of claim 61, wherein the molecular sensor probe is a carbon nanofiber structure grown using a plasma enhanced chemical vapor deposition process.

81. The method of claim 61, wherein the molecular sensor probe is fabricated from silicon, silicon nitride, or silicon dioxide using lithographic processing.

82. The method of claim 61, wherein the molecular sensor probe has been modified by chemical reaction, material adherence decoration, or immersion of reactive or non-reactive species, for enhancement of probing interaction of other purpose.

83. The method of claim 61, wherein the molecular sensor probe is a single walled structure grown using a thermal chemical vapor deposition process.

84. The method of claim 61, wherein the molecular sensor probe is a multi-walled structure grown using a thermal chemical vapor deposition process.

85. The method of claim 61, herein the molecular sensor probe is used in at least one of:

an atomic force microscope (AFM);

or

a scanning probe microscope (SPM).

86. The method of claim 61, wherein the molecular sensor probe is an array of probes.

87. The method of claim 70 wherein the molecular sensor probe is an array of probes.

88. The method of claim 61, wherein a length of the molecular sensor probe is exposed, wherein said exposed length being defined by a specific application for said molecular sensor probe.

89. The method of claim 61, wherein the molecular sensor probe is suitable for use in at least one of:

a field emitter;

a sensor;

a lithographic device;

a logic device;

an electrical contact;

or

an electrical interconnect.

90. The method of claim 86, wherein the molecular sensor probe is used in at least one of:

an atomic force microscope (AFM);

or

a scanning probe microscope (SPM).

91. The method of claim 86, wherein the molecular sensor probe is suitable for use in at least one of:

a nanotube based antenna device;

nanotube tweezers;

a nanotube based manipulator device;

a nanotube based actuator;

or

a nanotube based lever arm.

92. The method of claim 86, wherein the molecular sensor probe is suitable for use in at least one of:

a field emitter;

a sensor;

a lithographic device;

a logic device;

an electrical contact;

or

an electrical interconnect.