FLUIDIC NANOTUBES AND DEVICES
First Claim
1. A tubular field effect transistor (TFET), comprising:
- at least one semiconducting nanotube;
a reservoir fluidly coupled to each end of said nanotube;
a source electrode attached to a first end of said nanotube; and
a drain electrode attached to a second end of said nanotube;
wherein the passage of molecular species through said nanotube changes source to drain current flow.
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Accused Products
Abstract
Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.
77 Citations
12 Claims
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1. A tubular field effect transistor (TFET), comprising:
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at least one semiconducting nanotube; a reservoir fluidly coupled to each end of said nanotube; a source electrode attached to a first end of said nanotube; and a drain electrode attached to a second end of said nanotube; wherein the passage of molecular species through said nanotube changes source to drain current flow. - View Dependent Claims (2, 3, 4)
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5. A tubular field effect transistor (TFET), comprising:
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at least one semiconducting nanotube; a reservoir fluidly coupled to each end of said nanotube; a source electrode coupled proximal a first end of said nanotube; a drain electrode coupled proximal a second end of said nanotube; and capture molecules retained within said nanotube for capturing or slowing select molecular species; wherein the passage of molecular species through said nanotube changes source to drain current flow. - View Dependent Claims (6, 7)
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8. A tubular field effect transistor (TFET), comprising:
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at least one semiconducting nanotube; a reservoir fluidly coupled to each end of said nanotube; a source electrode coupled proximal a first end of said nanotube; a drain electrode coupled proximal a second end of said nanotube; and a gate electrode coupled toward the center of said nanotube for controlling ion transport through said nanotube; wherein the passage of molecular species through said nanotube changes source to drain current flow. - View Dependent Claims (9, 10)
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11. A tubular field effect transistor (TFET), comprising:
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at least one semiconducting nanotube; a reservoir fluidly coupled to each end of said nanotube; a source electrode coupled proximal a first end of said nanotube; a drain electrode coupled proximal a second end of said nanotube; a gate electrode coupled toward the center of said nanotube for controlling ion transport through said nanotube; and capture molecules retained within said nanotube for capturing or slowing select molecular species; wherein the passage of molecular species through said nanotube changes source to drain current flow. - View Dependent Claims (12)
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Specification