SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE
First Claim
1. An optoelectronic component comprising a semiconductor layer structure, the semiconductor layer structure comprising a superlattice composed of stacked layers of a first and at least one second type, whereinsaid layers of said first type and of said at least one second type are III-V compound semiconductors,adjacent layers of different types in said superlattice differ in composition with respect to at least one element,at least two layers of the same type in said superlattice have a different content of at least one element,the content of at least one element is graded within a layer of said superlattice, andsaid layers of said superlattice contain dopants in predefined concentrations, with said superlattice comprising layers that are doped with different dopants.
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Abstract
An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.
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Citations
14 Claims
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1. An optoelectronic component comprising a semiconductor layer structure, the semiconductor layer structure comprising a superlattice composed of stacked layers of a first and at least one second type, wherein
said layers of said first type and of said at least one second type are III-V compound semiconductors, adjacent layers of different types in said superlattice differ in composition with respect to at least one element, at least two layers of the same type in said superlattice have a different content of at least one element, the content of at least one element is graded within a layer of said superlattice, and said layers of said superlattice contain dopants in predefined concentrations, with said superlattice comprising layers that are doped with different dopants.
Specification