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NANOWIRE AND LARGER GaN BASED HEMTS

  • US 20110169012A1
  • Filed: 10/06/2008
  • Published: 07/14/2011
  • Est. Priority Date: 10/04/2007
  • Status: Active Grant
First Claim
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1. A high electron mobility transistor (HEMT) comprising:

  • a III-N based core-shell structure comprising a core member, a shell member surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at an interface between the core member and the shell member;

    a doped buffer layer having the core member disposed over a first portion of the doped buffer layer; and

    a gate material disposed around a portion of the shell member and over a second portion of the doped buffer layer.

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